Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: results of a CCQM pilot study

M.P. Seah; S.J. Spencer; F. Bensebaa; I. Vickridge; H. Danzebrink; M. Krumrey; T. Gross; W. Oesterle; E. Wendler; B. Rheinländer; Y. Azuma; I. Kojima; N. Suzuki; M. Suzuki; S. Tanuma; D.W. Moon; H. J. Lee; Hyun Mo Cho; H.Y. Chen; A.T.S. Wee; T. Osipowicz; J.S. Pan; W. A. Jordaan; R. Hauert; U. Klotz; C. Van Der Marel; M. Verheijen; Y. Tamminga; C. Jeynes; P. Bailey; S. Biswas; U. Falke; N.V. Nguyen; D. Chandler-Horowitz; J.R. Ehrstein; D. Muller; J.A. Dura

doi:10.1002/sia.1909

Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: results of a CCQM pilot study

M.P. Seah, S.J. Spencer, F. Bensebaa, I. Vickridge, H. Danzebrink, M. Krumrey, T. Gross, W. Oesterle, E. Wendler, B. Rheinländer, Y. Azuma, I. Kojima, N. Suzuki, M. Suzuki, S. Tanuma, D.W. Moon, H. J. Lee, Hyun Mo Cho, H.Y. Chen, A.T.S. WeeT. Osipowicz, J.S. Pan, W. A. Jordaan, R. Hauert, U. Klotz, C. Van Der Marel, M. Verheijen, Y. Tamminga, C. Jeynes, P. Bailey, S. Biswas, U. Falke, N.V. Nguyen, D. Chandler-Horowitz, J.R. Ehrstein, D. Muller, J.A. Dura

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A study was carried out for the measurement of ultrathin SiO ₂ on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.

Original language	English
Pages (from-to)	1269-1303
Number of pages	35
Journal	Surface and Interface Analysis
Volume	36
Issue number	9
DOIs	https://doi.org/10.1002/sia.1909
Publication status	Published - 1 Sept 2004
Externally published	Yes

Keywords

Calibration
Ellipsometry
Gate oxides
GIXRR
Interlaboratory study
MEIS
Neutron reflectometry
NRA
RBS
Silicon dioxide
SIMS
TEM
Thickness measurement
Traceability
XPS

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Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, H. M., Chen, H. Y., ... Dura, J. A. (2004). Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: results of a CCQM pilot study. Surface and Interface Analysis, 36(9), 1269-1303. https://doi.org/10.1002/sia.1909

@article{005e106815124033a8c914960c6d16ff,

title = "Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: results of a CCQM pilot study",

abstract = "A study was carried out for the measurement of ultrathin SiO 2 on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.",

keywords = "Calibration, Ellipsometry, Gate oxides, GIXRR, Interlaboratory study, MEIS, Neutron reflectometry, NRA, RBS, Silicon dioxide, SIMS, TEM, Thickness measurement, Traceability, XPS",

author = "M.P. Seah and S.J. Spencer and F. Bensebaa and I. Vickridge and H. Danzebrink and M. Krumrey and T. Gross and W. Oesterle and E. Wendler and B. Rheinl{\"a}nder and Y. Azuma and I. Kojima and N. Suzuki and M. Suzuki and S. Tanuma and D.W. Moon and Lee, {H. J.} and Cho, {Hyun Mo} and H.Y. Chen and A.T.S. Wee and T. Osipowicz and J.S. Pan and Jordaan, {W. A.} and R. Hauert and U. Klotz and {Van Der Marel}, C. and M. Verheijen and Y. Tamminga and C. Jeynes and P. Bailey and S. Biswas and U. Falke and N.V. Nguyen and D. Chandler-Horowitz and J.R. Ehrstein and D. Muller and J.A. Dura",

year = "2004",

month = sep,

day = "1",

doi = "10.1002/sia.1909",

language = "English",

volume = "36",

pages = "1269--1303",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "Wiley",

number = "9",

}

Seah, MP, Spencer, SJ, Bensebaa, F, Vickridge, I, Danzebrink, H, Krumrey, M, Gross, T, Oesterle, W, Wendler, E, Rheinländer, B, Azuma, Y, Kojima, I, Suzuki, N, Suzuki, M, Tanuma, S, Moon, DW, Lee, HJ, Cho, HM, Chen, HY, Wee, ATS, Osipowicz, T, Pan, JS, Jordaan, WA, Hauert, R, Klotz, U, Van Der Marel, C, Verheijen, M, Tamminga, Y, Jeynes, C, Bailey, P, Biswas, S, Falke, U, Nguyen, NV, Chandler-Horowitz, D, Ehrstein, JR, Muller, D & Dura, JA 2004, 'Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: results of a CCQM pilot study', Surface and Interface Analysis, vol. 36, no. 9, pp. 1269-1303. https://doi.org/10.1002/sia.1909

TY - JOUR

T1 - Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V

T2 - results of a CCQM pilot study

AU - Seah, M.P.

AU - Spencer, S.J.

AU - Bensebaa, F.

AU - Vickridge, I.

AU - Danzebrink, H.

AU - Krumrey, M.

AU - Gross, T.

AU - Oesterle, W.

AU - Wendler, E.

AU - Rheinländer, B.

AU - Azuma, Y.

AU - Kojima, I.

AU - Suzuki, N.

AU - Suzuki, M.

AU - Tanuma, S.

AU - Moon, D.W.

AU - Lee, H. J.

AU - Cho, Hyun Mo

AU - Chen, H.Y.

AU - Wee, A.T.S.

AU - Osipowicz, T.

AU - Pan, J.S.

AU - Jordaan, W. A.

AU - Hauert, R.

AU - Klotz, U.

AU - Van Der Marel, C.

AU - Verheijen, M.

AU - Tamminga, Y.

AU - Jeynes, C.

AU - Bailey, P.

AU - Biswas, S.

AU - Falke, U.

AU - Nguyen, N.V.

AU - Chandler-Horowitz, D.

AU - Ehrstein, J.R.

AU - Muller, D.

AU - Dura, J.A.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - A study was carried out for the measurement of ultrathin SiO 2 on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.

AB - A study was carried out for the measurement of ultrathin SiO 2 on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.

KW - Calibration

KW - Ellipsometry

KW - Gate oxides

KW - GIXRR

KW - Interlaboratory study

KW - MEIS

KW - Neutron reflectometry

KW - NRA

KW - RBS

KW - Silicon dioxide

KW - SIMS

KW - TEM

KW - Thickness measurement

KW - Traceability

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=4744371609&partnerID=8YFLogxK

U2 - 10.1002/sia.1909

DO - 10.1002/sia.1909

M3 - Article

AN - SCOPUS:4744371609

SN - 0142-2421

VL - 36

SP - 1269

EP - 1303

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 9

ER -

Critical review of the current status of thickness measurements for ultrathin SiO ₂ on Si Part V: results of a CCQM pilot study

Abstract

Keywords

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