Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: results of a CCQM pilot study

M.P. Seah, S.J. Spencer, F. Bensebaa, I. Vickridge, H. Danzebrink, M. Krumrey, T. Gross, W. Oesterle, E. Wendler, B. Rheinländer, Y. Azuma, I. Kojima, N. Suzuki, M. Suzuki, S. Tanuma, D.W. Moon, H. J. Lee, Hyun Mo Cho, H.Y. Chen, A.T.S. WeeT. Osipowicz, J.S. Pan, W. A. Jordaan, R. Hauert, U. Klotz, C. Van Der Marel, M. Verheijen, Y. Tamminga, C. Jeynes, P. Bailey, S. Biswas, U. Falke, N.V. Nguyen, D. Chandler-Horowitz, J.R. Ehrstein, D. Muller, J.A. Dura

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Abstract

A study was carried out for the measurement of ultrathin SiO 2 on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed.

Original languageEnglish
Pages (from-to)1269-1303
Number of pages35
JournalSurface and Interface Analysis
Volume36
Issue number9
DOIs
Publication statusPublished - 1 Sep 2004
Externally publishedYes

Keywords

  • Calibration
  • Ellipsometry
  • Gate oxides
  • GIXRR
  • Interlaboratory study
  • MEIS
  • Neutron reflectometry
  • NRA
  • RBS
  • Silicon dioxide
  • SIMS
  • TEM
  • Thickness measurement
  • Traceability
  • XPS

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