Coupling-based resistive-open defects in TAS-MRAM architectures

Joao Azevedo; Arnaud Virazel; Alberto Bosio; Luigi Dilillo; Patrick Girard; Aida Todri; G. Prenat; Jérémy Alvarez-Herault; Ken Mackay

doi:10.1109/ETS.2012.6233034

Coupling-based resistive-open defects in TAS-MRAM architectures

Joao Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, G. Prenat, Jérémy Alvarez-Herault, Ken Mackay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.

Original language	English
Title of host publication	2012 17th IEEE European Test Symposium (ETS)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	1
ISBN (Electronic)	978-1-4673-0697-3
ISBN (Print)	978-1-4673-0696-6
DOIs	https://doi.org/10.1109/ETS.2012.6233034
Publication status	Published - 9 Jul 2012
Externally published	Yes
Event	17th IEEE European Test Symposium (ETS 2012) - Annecy, France Duration: 28 May 2012 → 31 May 2012

Conference

Conference	17th IEEE European Test Symposium (ETS 2012)
Country/Territory	France
City	Annecy
Period	28/05/12 → 31/05/12

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10.1109/ETS.2012.6233034

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title = "Coupling-based resistive-open defects in TAS-MRAM architectures",

abstract = "Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.",

author = "Joao Azevedo and Arnaud Virazel and Alberto Bosio and Luigi Dilillo and Patrick Girard and Aida Todri and G. Prenat and J{\'e}r{\'e}my Alvarez-Herault and Ken Mackay",

year = "2012",

month = jul,

day = "9",

doi = "10.1109/ETS.2012.6233034",

language = "English",

isbn = "978-1-4673-0696-6",

booktitle = "2012 17th IEEE European Test Symposium (ETS)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "17th IEEE European Test Symposium (ETS 2012) ; Conference date: 28-05-2012 Through 31-05-2012",

}

Azevedo, J, Virazel, A, Bosio, A, Dilillo, L, Girard, P, Todri, A, Prenat, G, Alvarez-Herault, J & Mackay, K 2012, Coupling-based resistive-open defects in TAS-MRAM architectures. in 2012 17th IEEE European Test Symposium (ETS)., 6233034, Institute of Electrical and Electronics Engineers, 17th IEEE European Test Symposium (ETS 2012), Annecy, France, 28/05/12. https://doi.org/10.1109/ETS.2012.6233034

TY - GEN

T1 - Coupling-based resistive-open defects in TAS-MRAM architectures

AU - Azevedo, Joao

AU - Virazel, Arnaud

AU - Bosio, Alberto

AU - Dilillo, Luigi

AU - Girard, Patrick

AU - Todri, Aida

AU - Prenat, G.

AU - Alvarez-Herault, Jérémy

AU - Mackay, Ken

PY - 2012/7/9

Y1 - 2012/7/9

N2 - Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.

AB - Thermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors.

U2 - 10.1109/ETS.2012.6233034

DO - 10.1109/ETS.2012.6233034

M3 - Conference contribution

SN - 978-1-4673-0696-6

BT - 2012 17th IEEE European Test Symposium (ETS)

PB - Institute of Electrical and Electronics Engineers

T2 - 17th IEEE European Test Symposium (ETS 2012)

Y2 - 28 May 2012 through 31 May 2012

ER -

Coupling-based resistive-open defects in TAS-MRAM architectures

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