TY - JOUR
T1 - Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets
AU - Brübach, J.
AU - Silov, A.Y.
AU - Haverkort, J.E.M.
AU - Wolter, J.H.
AU - Vleuten, van der, W.C.
PY - 1997
Y1 - 1997
N2 - We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset ¿Eccould be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by ¿Ec. Knowing ¿Ec, the heavy-hole (hh) and light-hole (lh) band offsets ¿Ehhand ¿Elhcould subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio ofQc= 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV.
AB - We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset ¿Eccould be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by ¿Ec. Knowing ¿Ec, the heavy-hole (hh) and light-hole (lh) band offsets ¿Ehhand ¿Elhcould subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio ofQc= 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV.
U2 - 10.1006/spmi.1996.0177
DO - 10.1006/spmi.1996.0177
M3 - Article
VL - 21
SP - 527
EP - 532
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 4
ER -