Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

J.M. Shi; G. A. Farias; P. M. Koenraad; A.F.W. van de Stadt; F.M. Peeters; J. H. Wolter; J. T. Devreese

Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

J.M. Shi, G. A. Farias, P. M. Koenraad, A.F.W. van de Stadt, F.M. Peeters, J. H. Wolter, J. T. Devreese

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Abstract

We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d⁺/DX⁰ and d⁺/DX^- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d⁺/DX^- model can explain well the experimental data.

Original language	English
Pages (from-to)	327-331
Number of pages	5
Journal	Brazilian Journal of Physics
Volume	27A
Issue number	4
Publication status	Published - 1 Dec 1997

Cite this

@article{e22023c180c848b5a602081b42247598,

title = "Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations",

abstract = "We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.",

author = "J.M. Shi and Farias, {G. A.} and Koenraad, {P. M.} and {van de Stadt}, A.F.W. and F.M. Peeters and Wolter, {J. H.} and Devreese, {J. T.}",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "27A",

pages = "327--331",

journal = "Brazilian Journal of Physics",

issn = "0103-9733",

publisher = "Springer",

number = "4",

}

TY - JOUR

T1 - Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

AU - Shi, J.M.

AU - Farias, G. A.

AU - Koenraad, P. M.

AU - van de Stadt, A.F.W.

AU - Peeters, F.M.

AU - Wolter, J. H.

AU - Devreese, J. T.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.

AB - We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=0031314327&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031314327

SN - 0103-9733

VL - 27A

SP - 327

EP - 331

JO - Brazilian Journal of Physics

JF - Brazilian Journal of Physics

IS - 4

ER -

Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

Abstract

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