We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.
|Number of pages||5|
|Journal||Brazilian Journal of Physics|
|Publication status||Published - 1 Dec 1997|