Correlation effects of DX centers on electron mobility in delta doped semiconductors investigated by Monte Carlo simulations

J.M. Shi, G. A. Farias, P. M. Koenraad, A.F.W. van de Stadt, F.M. Peeters, J. H. Wolter, J. T. Devreese

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.

    Original languageEnglish
    Pages (from-to)327-331
    Number of pages5
    JournalBrazilian Journal of Physics
    Volume27A
    Issue number4
    Publication statusPublished - 1 Dec 1997

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