Abstract
We present a theoretical study of correlation effects of DX centers on electron mobility in Si δ-doped GaAs in the presence of an external hydrostatic pressure. A Monte Carlo approach has been developed to simulate these correlations through the charged-impurity distribution within the d+/DX0 and d+/DX- models. A detailed comparison between experiment and theory shows that theory excluding the correlation effects underestimates the electron mobility systematically, while the d+/DX- model can explain well the experimental data.
Original language | English |
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Pages (from-to) | 327-331 |
Number of pages | 5 |
Journal | Brazilian Journal of Physics |
Volume | 27A |
Issue number | 4 |
Publication status | Published - 1 Dec 1997 |