Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.
|Name||Microscopy and Microanalysis|
|Conference||conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05|
|Period||1/08/10 → 5/08/10|
|Other||16th Microscopy & Microanalysis Conference|