TY - GEN
T1 - Correlated twins in nanowires
AU - Verheijen, M.A.
AU - Algra, R.E.
AU - Enckevort, van, W.J.P.
AU - Vlieg, E.
AU - Feiner, L.F.
AU - Immink, W.G.G.
AU - Theissmann, R.
AU - Bakkers, E.P.A.M.
PY - 2010
Y1 - 2010
N2 - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.
AB - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.
U2 - 10.1017/S1431927610059301
DO - 10.1017/S1431927610059301
M3 - Conference contribution
T3 - Microscopy and Microanalysis
SP - 1808
EP - 1809
BT - Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA
T2 - conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05
Y2 - 1 August 2010 through 5 August 2010
ER -