Correlated twins in nanowires

M.A. Verheijen; R.E. Algra; W.J.P. Enckevort, van; E. Vlieg; L.F. Feiner; W.G.G. Immink; R. Theissmann; E.P.A.M. Bakkers

doi:10.1017/S1431927610059301

Correlated twins in nanowires

M.A. Verheijen, R.E. Algra, W.J.P. Enckevort, van, E. Vlieg, L.F. Feiner, W.G.G. Immink, R. Theissmann, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.

Original language	English
Title of host publication	Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA
Pages	1808-1809
DOIs	https://doi.org/10.1017/S1431927610059301
Publication status	Published - 2010
Event	conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05 - Duration: 1 Aug 2010 → 5 Aug 2010

Publication series

Name	Microscopy and Microanalysis
Number	Supplement 2
Volume	16
ISSN (Print)	1431-9276

Conference

Conference	conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05
Period	1/08/10 → 5/08/10
Other	16th Microscopy & Microanalysis Conference

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10.1017/S1431927610059301

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Verheijen, M. A., Algra, R. E., Enckevort, van, W. J. P., Vlieg, E., Feiner, L. F., Immink, W. G. G., Theissmann, R., & Bakkers, E. P. A. M. (2010). Correlated twins in nanowires. In Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA (pp. 1808-1809). (Microscopy and Microanalysis; Vol. 16, No. Supplement 2). https://doi.org/10.1017/S1431927610059301

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title = "Correlated twins in nanowires",

abstract = "Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.",

author = "M.A. Verheijen and R.E. Algra and {Enckevort, van}, W.J.P. and E. Vlieg and L.F. Feiner and W.G.G. Immink and R. Theissmann and E.P.A.M. Bakkers",

year = "2010",

doi = "10.1017/S1431927610059301",

language = "English",

series = "Microscopy and Microanalysis",

number = "Supplement 2",

pages = "1808--1809",

booktitle = "Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA",

note = "conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05 ; Conference date: 01-08-2010 Through 05-08-2010",

}

Verheijen, MA, Algra, RE, Enckevort, van, WJP, Vlieg, E, Feiner, LF, Immink, WGG, Theissmann, R & Bakkers, EPAM 2010, Correlated twins in nanowires. in Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA. Microscopy and Microanalysis, no. Supplement 2, vol. 16, pp. 1808-1809, conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05, 1/08/10. https://doi.org/10.1017/S1431927610059301

Correlated twins in nanowires. / Verheijen, M.A.; Algra, R.E.; Enckevort, van, W.J.P.; Vlieg, E.; Feiner, L.F.; Immink, W.G.G.; Theissmann, R.; Bakkers, E.P.A.M.

Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA. 2010. p. 1808-1809 (Microscopy and Microanalysis; Vol. 16, No. Supplement 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Correlated twins in nanowires

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AU - Algra, R.E.

AU - Enckevort, van, W.J.P.

AU - Vlieg, E.

AU - Feiner, L.F.

AU - Immink, W.G.G.

AU - Theissmann, R.

AU - Bakkers, E.P.A.M.

PY - 2010

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N2 - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.

AB - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design which allows for new device concepts. The control in defects (i.e. twin planes) and the crystal structure are crucial for an optimal device performance. Normally twin planes occur randomly during growth, leading to imperfection in the crystal quality of the nanowire, resulting in electronic and optical barriers.

U2 - 10.1017/S1431927610059301

DO - 10.1017/S1431927610059301

M3 - Conference contribution

T3 - Microscopy and Microanalysis

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EP - 1809

BT - Proceedings of the 16th Microscopy & Microanalysis Conference, 1-5 August 2010, Portland, OR, USA

T2 - conference; 16th Microscopy & Microanalysis Conference; 2010-08-01; 2010-08-05

Y2 - 1 August 2010 through 5 August 2010

ER -

Correlated twins in nanowires

Abstract

Publication series

Conference

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