Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

J. Bocquel, V.R. Kortan, C. Sahin, R.P. Campion, B.L. Gallagher, M.E. Flatte, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)
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Abstract

We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)(-) ionized acceptor state to the (Fe3+)(0) isoelectronic state, which alters the spin moment and dramatically modifies the measured local electronic contrast in topographic maps of the surface. Evidence of internal transitions among the d states of the Fe core is also seen in topographic maps where dark anisotropic features emerge from the interference between two paths: the direct tip-sample tunneling and tunneling which excites a d-state core exciton of the Fe dopant.
Original languageEnglish
Article number075421
Pages (from-to)075421-1/6
Number of pages6
JournalPhysical Review B
Volume87
Issue number7
DOIs
Publication statusPublished - 2013

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