Abstract
In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.
Original language | English |
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Title of host publication | Thirty-first IEEE Photovoltaic Specialists Conference, 2005 |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 1253-1256 |
Number of pages | 4 |
ISBN (Print) | 0-7803-8707-4 |
DOIs | |
Publication status | Published - 30 Nov 2005 |
Event | 31st IEEE Photovoltaic Specialists Conference (PVSC 2005) - Coronado Springs Resort, Lake Buena Vista, United States Duration: 3 Jan 2005 → 7 Jan 2005 Conference number: 31 |
Conference
Conference | 31st IEEE Photovoltaic Specialists Conference (PVSC 2005) |
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Abbreviated title | PVSC 2005 |
Country/Territory | United States |
City | Lake Buena Vista |
Period | 3/01/05 → 7/01/05 |