Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings

W. M.M. Kessels, P.J. van den Oever, B. Hoex, R. C.M. Bosch, A. J.M. van Erven, M. D. Bijker, M. C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
1 Downloads (Pure)

Abstract

In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.

Original languageEnglish
Title of host publicationThirty-first IEEE Photovoltaic Specialists Conference, 2005
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1253-1256
Number of pages4
ISBN (Print)0-7803-8707-4
DOIs
Publication statusPublished - 30 Nov 2005
Event31st IEEE Photovoltaic Specialists Conference (PVSC 2005) - Coronado Springs Resort, Lake Buena Vista, United States
Duration: 3 Jan 20057 Jan 2005
Conference number: 31

Conference

Conference31st IEEE Photovoltaic Specialists Conference (PVSC 2005)
Abbreviated titlePVSC 2005
Country/TerritoryUnited States
CityLake Buena Vista
Period3/01/057/01/05

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