Controlling the fixed charge and passivation properties of Si(100)Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

G. Dingemans, N.M. Terlinden, M.A. Verheijen, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

157 Citations (Scopus)
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