Controlling the fixed charge and passivation properties of Si(100)Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

G. Dingemans, N.M. Terlinden, M.A. Verheijen, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Al2O3 synthesized by atomic layer deposition (ALD) on H-terminated Si(100) exhibits a very thin (~1¿nm) interfacial SiOx layer. At this interface, a high fixed negative charge density, Qf, is present after annealing which contributes to ultralow surface recombination velocities¿~5¿nm), the polarity of the effective charge density changed from negative to positive. The observed changes in Qf and the associated field-effect passivation had a significant influence on the injection-level-dependent minority carrier lifetime of Si.
Original languageEnglish
Article number093715
Pages (from-to)093715-1/6
Number of pages6
JournalJournal of Applied Physics
Volume110
Issue number9
DOIs
Publication statusPublished - 2011

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