Abstract
Al2O3 synthesized by atomic layer deposition (ALD) on H-terminated Si(100) exhibits a very thin (~1¿nm) interfacial SiOx layer. At this interface, a high fixed negative charge density, Qf, is present after annealing which contributes to ultralow surface recombination velocities¿~5¿nm), the polarity of the effective charge density changed from negative to positive. The observed changes in Qf and the associated field-effect passivation had a significant influence on the injection-level-dependent minority carrier lifetime of Si.
Original language | English |
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Article number | 093715 |
Pages (from-to) | 093715-1/6 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 110 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2011 |