Controlled domain-wall injection in perpendicularly magnetized strips

R. Lavrijsen; J.H. Franken; J.T. Kohlhepp; H.J.M. Swagten; B. Koopmans

doi:10.1063/1.3432703

Controlled domain-wall injection in perpendicularly magnetized strips

R. Lavrijsen, J.H. Franken, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans

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Abstract

For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation and position of the DW. We use Ga+ irradiation of Pt/Co/Pt strips to locally change the perpendicular magnetic anisotropy. This allows us to controllably inject DWs into a device at a tunable field. The observed initial linear decrease and subsequent increase in the DW injection field upon increasing irradiation dose are explained by micromagnetic simulations and an analytical one-dimensional model.

Original language	English
Article number	222502
Pages (from-to)	222502-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3432703
Publication status	Published - 2010

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title = "Controlled domain-wall injection in perpendicularly magnetized strips",

abstract = "For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation and position of the DW. We use Ga+ irradiation of Pt/Co/Pt strips to locally change the perpendicular magnetic anisotropy. This allows us to controllably inject DWs into a device at a tunable field. The observed initial linear decrease and subsequent increase in the DW injection field upon increasing irradiation dose are explained by micromagnetic simulations and an analytical one-dimensional model.",

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AU - Lavrijsen, R.

AU - Franken, J.H.

AU - Kohlhepp, J.T.

AU - Swagten, H.J.M.

AU - Koopmans, B.

PY - 2010

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N2 - For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation and position of the DW. We use Ga+ irradiation of Pt/Co/Pt strips to locally change the perpendicular magnetic anisotropy. This allows us to controllably inject DWs into a device at a tunable field. The observed initial linear decrease and subsequent increase in the DW injection field upon increasing irradiation dose are explained by micromagnetic simulations and an analytical one-dimensional model.

AB - For applications of domain wall (DW) motion in magnetic devices, it is vital to control the creation and position of the DW. We use Ga+ irradiation of Pt/Co/Pt strips to locally change the perpendicular magnetic anisotropy. This allows us to controllably inject DWs into a device at a tunable field. The observed initial linear decrease and subsequent increase in the DW injection field upon increasing irradiation dose are explained by micromagnetic simulations and an analytical one-dimensional model.

U2 - 10.1063/1.3432703

DO - 10.1063/1.3432703

M3 - Article

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SP - 222502-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

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Controlled domain-wall injection in perpendicularly magnetized strips

Abstract

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