Control of strain in GaSbAs/InAs/GaAs quantum dots

V. Haxha; I. Drouzas; J.M. Ulloa; M. Bozkurt; P.M. Koenraad; D.J. Mowbray; H.Y. Liu; M.J. Steer; M. Hopkinson; M.A. Migliorato

doi:10.1088/1742-6596/245/1/012065

Control of strain in GaSbAs/InAs/GaAs quantum dots

V. Haxha, I. Drouzas, J.M. Ulloa, M. Bozkurt, P.M. Koenraad, D.J. Mowbray, H.Y. Liu, M.J. Steer, M. Hopkinson, M.A. Migliorato

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Abstract

We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

Original language	English
Pages (from-to)	012065-1/4
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	245
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/245/1/012065
Publication status	Published - 2010

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title = "Control of strain in GaSbAs/InAs/GaAs quantum dots",

abstract = "We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.",

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language = "English",

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TY - JOUR

T1 - Control of strain in GaSbAs/InAs/GaAs quantum dots

AU - Haxha, V.

AU - Drouzas, I.

AU - Ulloa, J.M.

AU - Bozkurt, M.

AU - Koenraad, P.M.

AU - Mowbray, D.J.

AU - Liu, H.Y.

AU - Steer, M.J.

AU - Hopkinson, M.

AU - Migliorato, M.A.

PY - 2010

Y1 - 2010

N2 - We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

AB - We discuss strain simulations of quantum dot structures covered with a GaSbAs strain reducing capping layer in the presence of Sb segregation. Cross Sectional Scanning Tunneling Microscopy shows strong Sb and In segregation in the material surrounding the quantum dot. Using the three layer model originally proposed for the SiGe system by D. J. Godbey, M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 (1997) we accurately calculate the segregation profile and include a non uniform composition to our models. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain reduction layer.

U2 - 10.1088/1742-6596/245/1/012065

DO - 10.1088/1742-6596/245/1/012065

M3 - Article

SN - 1742-6588

VL - 245

SP - 012065-1/4

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

ER -

Control of strain in GaSbAs/InAs/GaAs quantum dots

Abstract

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