Continuous wavelength tuning of InAs/InP quantum dots in the 1.55 μm region by inserting ultra-thin GaAs and GaP interlayers

R. Nötzel, Q. Gong, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proceedings of the International Conference on Solid State Devices and Materials (SSDM 2004), 15-17 September 2004, Tokyo, Japan
Place of Publication	Tokyo (Japan)
Publication status	Published - 2004

Cite this

@inproceedings{929bfaa71a66464091851eb7eeca6612,

title = "Continuous wavelength tuning of InAs/InP quantum dots in the 1.55 μm region by inserting ultra-thin GaAs and GaP interlayers",

author = "R. N{\"o}tzel and Q. Gong and J.H. Wolter",

year = "2004",

language = "English",

booktitle = "Proceedings of the International Conference on Solid State Devices and Materials (SSDM 2004), 15-17 September 2004, Tokyo, Japan",

}

Continuous wavelength tuning of InAs/InP quantum dots in the 1.55 μm region by inserting ultra-thin GaAs and GaP interlayers. / Nötzel, R.; Gong, Q.; Wolter, J.H.
Proceedings of the International Conference on Solid State Devices and Materials (SSDM 2004), 15-17 September 2004, Tokyo, Japan. Tokyo (Japan), 2004.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Continuous wavelength tuning of InAs/InP quantum dots in the 1.55 μm region by inserting ultra-thin GaAs and GaP interlayers

AU - Nötzel, R.

AU - Gong, Q.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

M3 - Conference contribution

BT - Proceedings of the International Conference on Solid State Devices and Materials (SSDM 2004), 15-17 September 2004, Tokyo, Japan

CY - Tokyo (Japan)

ER -