Contact effects in high performance fully printed p-channel organic thin film transistors

A. Valletta, A. Daami, M. Benwadih, R. Coppard, G. Fortunato, M. Rapisarda, F. Torricelli, L. Mariucci

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Abstract

Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length
Original languageEnglish
Article number233309
Pages (from-to)233309-1/2
Number of pages4
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
Publication statusPublished - 2011

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Valletta, A., Daami, A., Benwadih, M., Coppard, R., Fortunato, G., Rapisarda, M., ... Mariucci, L. (2011). Contact effects in high performance fully printed p-channel organic thin film transistors. Applied Physics Letters, 99(23), 233309-1/2. [233309]. https://doi.org/10.1063/1.3669701
Valletta, A. ; Daami, A. ; Benwadih, M. ; Coppard, R. ; Fortunato, G. ; Rapisarda, M. ; Torricelli, F. ; Mariucci, L. / Contact effects in high performance fully printed p-channel organic thin film transistors. In: Applied Physics Letters. 2011 ; Vol. 99, No. 23. pp. 233309-1/2.
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abstract = "Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length",
author = "A. Valletta and A. Daami and M. Benwadih and R. Coppard and G. Fortunato and M. Rapisarda and F. Torricelli and L. Mariucci",
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Valletta, A, Daami, A, Benwadih, M, Coppard, R, Fortunato, G, Rapisarda, M, Torricelli, F & Mariucci, L 2011, 'Contact effects in high performance fully printed p-channel organic thin film transistors', Applied Physics Letters, vol. 99, no. 23, 233309, pp. 233309-1/2. https://doi.org/10.1063/1.3669701

Contact effects in high performance fully printed p-channel organic thin film transistors. / Valletta, A.; Daami, A.; Benwadih, M.; Coppard, R.; Fortunato, G.; Rapisarda, M.; Torricelli, F.; Mariucci, L.

In: Applied Physics Letters, Vol. 99, No. 23, 233309, 2011, p. 233309-1/2.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Contact effects in high performance fully printed p-channel organic thin film transistors

AU - Valletta, A.

AU - Daami, A.

AU - Benwadih, M.

AU - Coppard, R.

AU - Fortunato, G.

AU - Rapisarda, M.

AU - Torricelli, F.

AU - Mariucci, L.

PY - 2011

Y1 - 2011

N2 - Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length

AB - Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the organic thin film transistors, with channel length

U2 - 10.1063/1.3669701

DO - 10.1063/1.3669701

M3 - Article

VL - 99

SP - 233309-1/2

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233309

ER -

Valletta A, Daami A, Benwadih M, Coppard R, Fortunato G, Rapisarda M et al. Contact effects in high performance fully printed p-channel organic thin film transistors. Applied Physics Letters. 2011;99(23):233309-1/2. 233309. https://doi.org/10.1063/1.3669701