Concepts and prospects of passivating contacts for crystalline silicon solar cells

J. Melskens; B.W.H. Van De Loo; B. Macco; M.F.J. Vos; J. Palmans; S. Smit; W.M.M. Kessels

doi:10.1109/PVSC.2015.7355646

Concepts and prospects of passivating contacts for crystalline silicon solar cells

J. Melskens
, B.W.H. Van De Loo
, B. Macco
, M.F.J. Vos
, J. Palmans
, S. Smit
, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

23 Citations (Scopus)

3 Downloads (Pure)

Abstract

To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355646
Publication status	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference (PVSC 2015) - Hyatt Regency New Orleans , New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 Conference number: 42 https://www.ieee-pvsc.org/PVSC42/

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference (PVSC 2015)
Abbreviated title	PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15
Internet address	https://www.ieee-pvsc.org/PVSC42/

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

charge carrier lifetime
contacts
crystalline silicon
passivation
photovoltaic cells

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10.1109/PVSC.2015.7355646

Cite this

Melskens, J., Van De Loo, B. W. H., Macco, B., Vos, M. F. J., Palmans, J., Smit, S., & Kessels, W. M. M. (2015). Concepts and prospects of passivating contacts for crystalline silicon solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana Article 7355646 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2015.7355646

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title = "Concepts and prospects of passivating contacts for crystalline silicon solar cells",

abstract = "To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects",

keywords = "charge carrier lifetime, contacts, crystalline silicon, passivation, photovoltaic cells",

author = "J. Melskens and \{Van De Loo\}, B.W.H. and B. Macco and M.F.J. Vos and J. Palmans and S. Smit and W.M.M. Kessels",

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publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "42nd IEEE Photovoltaic Specialist Conference (PVSC 2015), PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

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Melskens, J, Van De Loo, BWH, Macco, B, Vos, MFJ, Palmans, J, Smit, S & Kessels, WMM 2015, Concepts and prospects of passivating contacts for crystalline silicon solar cells. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana., 7355646, Institute of Electrical and Electronics Engineers, Piscataway, 42nd IEEE Photovoltaic Specialist Conference (PVSC 2015), New Orleans, Louisiana, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7355646

Concepts and prospects of passivating contacts for crystalline silicon solar cells. / Melskens, J.; Van De Loo, B.W.H.; Macco, B. et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana. Piscataway: Institute of Electrical and Electronics Engineers, 2015. 7355646.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Concepts and prospects of passivating contacts for crystalline silicon solar cells

AU - Melskens, J.

AU - Van De Loo, B.W.H.

AU - Macco, B.

AU - Vos, M.F.J.

AU - Palmans, J.

AU - Smit, S.

AU - Kessels, W.M.M.

N1 - Conference code: 42

PY - 2015/12/14

Y1 - 2015/12/14

N2 - To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects

AB - To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects

KW - charge carrier lifetime

KW - contacts

KW - crystalline silicon

KW - passivation

KW - photovoltaic cells

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DO - 10.1109/PVSC.2015.7355646

M3 - Conference contribution

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SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 42nd IEEE Photovoltaic Specialist Conference (PVSC 2015)

Y2 - 14 June 2015 through 19 June 2015

ER -

Concepts and prospects of passivating contacts for crystalline silicon solar cells

Abstract

Conference

UN SDGs

Keywords

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