Concepts and prospects of passivating contacts for crystalline silicon solar cells

J. Melskens, B.W.H. Van De Loo, B. Macco, M.F.J. Vos, J. Palmans, S. Smit, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

16 Citations (Scopus)
3 Downloads (Pure)


To further increase the conversion efficiency of crystalline silicon solar cells it is vital to reduce the recombination losses between the photoactive part of the solar cell and the metal contacts. This is ideally achieved by fabricating contacts which passivate defects at the silicon surface while being simultaneously selective for only a single type of charge carrier, i.e. either electrons or holes. Despite the extensive research effort aimed at realizing such contacts, no clear overview of the fundamental physics of passivating contacts has appeared yet. Therefore, we present such an overview, introduce a clear classification of passivating contacts, and discuss their design guidelines and future prospects

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, 14-19 June 2015, New Orleans, Louisiana
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)9781479979448
Publication statusPublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference (PVSC 2015) - Hyatt Regency New Orleans , New Orleans, United States
Duration: 14 Jun 201519 Jun 2015
Conference number: 42


Conference42nd IEEE Photovoltaic Specialist Conference (PVSC 2015)
Abbreviated titlePVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Internet address


  • charge carrier lifetime
  • contacts
  • crystalline silicon
  • passivation
  • photovoltaic cells


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