Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy

J. Bocquel; A.D. Giddings; T. Mano; T.J. Prosa; D.J. Larson; P.M. Koenraad

doi:10.1063/1.4897006

Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy

J. Bocquel, A.D. Giddings, T. Mano, T.J. Prosa, D.J. Larson, P.M. Koenraad

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Abstract

Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

Original language	English
Article number	153102
Pages (from-to)	153102-1/4
Number of pages	4
Journal	Applied Physics Letters
Volume	105
DOIs	https://doi.org/10.1063/1.4897006
Publication status	Published - 2014

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title = "Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy",

abstract = "Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.",

author = "J. Bocquel and A.D. Giddings and T. Mano and T.J. Prosa and D.J. Larson and P.M. Koenraad",

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journal = "Applied Physics Letters",

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AU - Bocquel, J.

AU - Giddings, A.D.

AU - Mano, T.

AU - Prosa, T.J.

AU - Larson, D.J.

AU - Koenraad, P.M.

PY - 2014

Y1 - 2014

N2 - Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

AB - Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

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DO - 10.1063/1.4897006

M3 - Article

SN - 0003-6951

VL - 105

SP - 153102-1/4

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 153102

ER -

Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy

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