Composition profiling of GaAs/AIGaAs quantum dots grown by droplet epitaxy

J. Bocquel, A.D. Giddings, T. Mano, T.J. Prosa, D.J. Larson, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
127 Downloads (Pure)

Abstract

Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of crosssectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.
Original languageEnglish
Article number153102
Pages (from-to)153102-1/4
Number of pages4
JournalApplied Physics Letters
Volume105
DOIs
Publication statusPublished - 2014

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