Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert; C. Cornet; T. Nguyen Thanh; M.O. Nestoklon; K. Pereira Da Silva; M.I. Alonso; A.R. Goñi; S. Tricot; P. Turban; M. Perrin; H. Folliot; T. Rohel; L. Pedesseau; J.M. Jancu; J. Even; S. Mauger; P.M. Koenraad; A. Balocchi; P. Barate; X. Marie; N. Bertru; A. Le Corre; O. Durand

doi:10.1109/ICIPRM.2014.6880555

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert
, C. Cornet
, T. Nguyen Thanh
, M.O. Nestoklon
, K. Pereira Da Silva
, M.I. Alonso
, A.R. Goñi
, S. Tricot
, P. Turban
, M. Perrin
, H. Folliot
, T. Rohel
, L. Pedesseau
, J.M. Jancu
, J. Even
, S. Mauger
, P.M. Koenraad
, A. Balocchi
, P. Barate
, X. Marie

N. Bertru, A. Le Corre, O. Durand

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

Original language	English
Title of host publication	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Print)	9781479957293
DOIs	https://doi.org/10.1109/ICIPRM.2014.6880555
Publication status	Published - 2014
Event	26th International Conference on Indium Phosphide and Related Materials (IPRM 2014) - Montpellier, France Duration: 11 May 2014 → 15 May 2014 Conference number: 26

Conference

Conference	26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
Abbreviated title	IPRM 2014
Country/Territory	France
City	Montpellier
Period	11/05/14 → 15/05/14
Other	26th International Conference on Indium Phosphide and Related Materials

Access to Document

10.1109/ICIPRM.2014.6880555

Cite this

Robert, C., Cornet, C., Thanh, T. N., Nestoklon, M. O., Pereira Da Silva, K., Alonso, M. I., Goñi, A. R., Tricot, S., Turban, P., Perrin, M., Folliot, H., Rohel, T., Pedesseau, L., Jancu, J. M., Even, J., Mauger, S., Koenraad, P. M., Balocchi, A., Barate, P., ... Durand, O. (2014). Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 Article 6880555 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2014.6880555

@inproceedings{6134bc5265cd4a8e8f768e2d4d7ca99b,

title = "Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots",

abstract = "The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.",

author = "C. Robert and C. Cornet and Thanh, \{T. Nguyen\} and M.O. Nestoklon and \{Pereira Da Silva\}, K. and M.I. Alonso and A.R. Go{\~n}i and S. Tricot and P. Turban and M. Perrin and H. Folliot and T. Rohel and L. Pedesseau and J.M. Jancu and J. Even and S. Mauger and P.M. Koenraad and A. Balocchi and P. Barate and X. Marie and N. Bertru and \{Le Corre\}, A. and O. Durand",

year = "2014",

doi = "10.1109/ICIPRM.2014.6880555",

language = "English",

isbn = "9781479957293",

booktitle = "26th International Conference on Indium Phosphide and Related Materials, IPRM 2014",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), IPRM 2014 ; Conference date: 11-05-2014 Through 15-05-2014",

}

Robert, C, Cornet, C, Thanh, TN, Nestoklon, MO, Pereira Da Silva, K, Alonso, MI, Goñi, AR, Tricot, S, Turban, P, Perrin, M, Folliot, H, Rohel, T, Pedesseau, L, Jancu, JM, Even, J, Mauger, S, Koenraad, PM, Balocchi, A, Barate, P, Marie, X, Bertru, N, Le Corre, A & Durand, O 2014, Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880555, Institute of Electrical and Electronics Engineers, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), Montpellier, France, 11/05/14. https://doi.org/10.1109/ICIPRM.2014.6880555

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots. / Robert, C.; Cornet, C.; Thanh, T. Nguyen et al.
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers, 2014. 6880555.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

AU - Robert, C.

AU - Cornet, C.

AU - Thanh, T. Nguyen

AU - Nestoklon, M.O.

AU - Pereira Da Silva, K.

AU - Alonso, M.I.

AU - Goñi, A.R.

AU - Tricot, S.

AU - Turban, P.

AU - Perrin, M.

AU - Folliot, H.

AU - Rohel, T.

AU - Pedesseau, L.

AU - Jancu, J.M.

AU - Even, J.

AU - Mauger, S.

AU - Koenraad, P.M.

AU - Balocchi, A.

AU - Barate, P.

AU - Marie, X.

AU - Bertru, N.

AU - Le Corre, A.

AU - Durand, O.

N1 - Conference code: 26

PY - 2014

Y1 - 2014

N2 - The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

AB - The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

UR - https://www.scopus.com/pages/publications/84906751684

U2 - 10.1109/ICIPRM.2014.6880555

DO - 10.1109/ICIPRM.2014.6880555

M3 - Conference contribution

AN - SCOPUS:84906751684

SN - 9781479957293

BT - 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014

PB - Institute of Electrical and Electronics Engineers

T2 - 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)

Y2 - 11 May 2014 through 15 May 2014

ER -

Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this