Composition dependent nature of the fundamental optical transition in (In, Ga)As/GaP quantum dots

C. Robert, C. Cornet, T. Nguyen Thanh, M.O. Nestoklon, K. Pereira Da Silva, M.I. Alonso, A.R. Goñi, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pedesseau, J.M. Jancu, J. Even, S. Mauger, P.M. Koenraad, A. Balocchi, P. Barate, X. MarieN. Bertru, A. Le Corre, O. Durand

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The nature of the ground optical transition in (In, Ga)As/GaP quantum dots is thoroughly investigated through k·p calculations and a supercell tight-binding simulation. Quantum dot morphology is deduced from scanning-tunneling-microscopy images. The strain field has a strong influence on the conduction band states. Indeed, for a pure GaAs QD, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a tensile strain region, having mainly Xz character. Time resolved and hydrostatic pressure photoluminescence experiments strongly support the theoretical conclusions. Promising results from the literature on (In, Ga)As/GaP quantum dot will be reviewed.

Original languageEnglish
Title of host publication26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Print)9781479957293
DOIs
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials (IPRM 2014) - Montpellier, France
Duration: 11 May 201415 May 2014
Conference number: 26

Conference

Conference26th International Conference on Indium Phosphide and Related Materials (IPRM 2014)
Abbreviated titleIPRM 2014
CountryFrance
CityMontpellier
Period11/05/1415/05/14
Other26th International Conference on Indium Phosphide and Related Materials

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