Composition and bonding structure of plasma-assisted ALD Al2O3 films

V. Verlaan; L.R.J.G. van den Elzen; G. Dingemans; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1002/pssc.200982891

Composition and bonding structure of plasma-assisted ALD Al2O3 films

V. Verlaan
, L.R.J.G. van den Elzen
, G. Dingemans
, M.C.M. Sanden, van de
, W.M.M. Kessels

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) and elastic recoil detection (ERD). The O/Al atom ratio in the films changes from 2.0 to 1.5 and the mass density increases from 2.6 to 3.1 g/cm3 when increasing the substrate temperature. The hydrogen content decreases with substrate temperature from 13 at.% at 50 °C to less than 1 at.% at 400 °C. Fourier transform infrared spectroscopy shows that the H atoms are predominantly bonded to O atoms, and that the H atoms are effectively removed after annealing at 400 °C. Depth resolved XPS measurements reveal that the atomic concentrations remains constant after annealing. The O1s and Al2p XPS peak positions show that film has different bonding structure at the interface. compared to the bulk. After annealing the bulk of the film shows indications of relaxation whereas the interface is unchanged.

Original language	English
Pages (from-to)	976-979
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982891
Publication status	Published - 2010

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title = "Composition and bonding structure of plasma-assisted ALD Al2O3 films",

abstract = "A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) and elastic recoil detection (ERD). The O/Al atom ratio in the films changes from 2.0 to 1.5 and the mass density increases from 2.6 to 3.1 g/cm3 when increasing the substrate temperature. The hydrogen content decreases with substrate temperature from 13 at.\% at 50 °C to less than 1 at.\% at 400 °C. Fourier transform infrared spectroscopy shows that the H atoms are predominantly bonded to O atoms, and that the H atoms are effectively removed after annealing at 400 °C. Depth resolved XPS measurements reveal that the atomic concentrations remains constant after annealing. The O1s and Al2p XPS peak positions show that film has different bonding structure at the interface. compared to the bulk. After annealing the bulk of the film shows indications of relaxation whereas the interface is unchanged.",

author = "V. Verlaan and \{van den Elzen\}, L.R.J.G. and G. Dingemans and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

year = "2010",

doi = "10.1002/pssc.200982891",

language = "English",

volume = "7",

pages = "976--979",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

TY - JOUR

T1 - Composition and bonding structure of plasma-assisted ALD Al2O3 films

AU - Verlaan, V.

AU - van den Elzen, L.R.J.G.

AU - Dingemans, G.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) and elastic recoil detection (ERD). The O/Al atom ratio in the films changes from 2.0 to 1.5 and the mass density increases from 2.6 to 3.1 g/cm3 when increasing the substrate temperature. The hydrogen content decreases with substrate temperature from 13 at.% at 50 °C to less than 1 at.% at 400 °C. Fourier transform infrared spectroscopy shows that the H atoms are predominantly bonded to O atoms, and that the H atoms are effectively removed after annealing at 400 °C. Depth resolved XPS measurements reveal that the atomic concentrations remains constant after annealing. The O1s and Al2p XPS peak positions show that film has different bonding structure at the interface. compared to the bulk. After annealing the bulk of the film shows indications of relaxation whereas the interface is unchanged.

AB - A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) and elastic recoil detection (ERD). The O/Al atom ratio in the films changes from 2.0 to 1.5 and the mass density increases from 2.6 to 3.1 g/cm3 when increasing the substrate temperature. The hydrogen content decreases with substrate temperature from 13 at.% at 50 °C to less than 1 at.% at 400 °C. Fourier transform infrared spectroscopy shows that the H atoms are predominantly bonded to O atoms, and that the H atoms are effectively removed after annealing at 400 °C. Depth resolved XPS measurements reveal that the atomic concentrations remains constant after annealing. The O1s and Al2p XPS peak positions show that film has different bonding structure at the interface. compared to the bulk. After annealing the bulk of the film shows indications of relaxation whereas the interface is unchanged.

U2 - 10.1002/pssc.200982891

DO - 10.1002/pssc.200982891

M3 - Article

SN - 1610-1634

VL - 7

SP - 976

EP - 979

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3-4

ER -

Composition and bonding structure of plasma-assisted ALD Al2O3 films

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