Composite quantum wells on InP for blue stark shift

A.Y. Silov, B.N. Aneeshkumar, M.R. Leijs, H. Vonk, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.
Original languageEnglish
Title of host publicationProceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands
EditorsX.J.M. Leijtens, J.H. Besten, den
Place of PublicationDelft
PublisherDelft University of Technology
Pages167-170
ISBN (Print)90-9014260-6
Publication statusPublished - 2000
Event5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Netherlands
Duration: 30 Oct 200030 Oct 2000

Conference

Conference5th Annual Symposium of the IEEE/LEOS Benelux Chapter
CountryNetherlands
CityDelft
Period30/10/0030/10/00
OtherIEEE/LEOS symposium

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