Composite quantum wells on InP for blue stark shift

A.Y. Silov; B.N. Aneeshkumar; M.R. Leijs; H. Vonk; J.H. Wolter

Composite quantum wells on InP for blue stark shift

A.Y. Silov, B.N. Aneeshkumar, M.R. Leijs, H. Vonk, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.

Original language	English
Title of host publication	Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands
Editors	X.J.M. Leijtens, J.H. Besten, den
Place of Publication	Delft
Publisher	Technische Universiteit Delft
Pages	167-170
ISBN (Print)	90-9014260-6
Publication status	Published - 2000
Event	5th Annual Symposium of the IEEE/LEOS Benelux Chapter - Delft, Netherlands Duration: 30 Oct 2000 → 30 Oct 2000

Conference

Conference	5th Annual Symposium of the IEEE/LEOS Benelux Chapter
Country/Territory	Netherlands
City	Delft
Period	30/10/00 → 30/10/00
Other	IEEE/LEOS symposium

Cite this

@inproceedings{25629dcbb903461e8ed08dc822cf52aa,

title = "Composite quantum wells on InP for blue stark shift",

abstract = "Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.",

author = "A.Y. Silov and B.N. Aneeshkumar and M.R. Leijs and H. Vonk and J.H. Wolter",

year = "2000",

language = "English",

isbn = "90-9014260-6",

pages = "167--170",

editor = "X.J.M. Leijtens and {Besten, den}, J.H.",

booktitle = "Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands",

publisher = "Technische Universiteit Delft",

address = "Netherlands",

note = "5th Annual Symposium of the IEEE/LEOS Benelux Chapter ; Conference date: 30-10-2000 Through 30-10-2000",

}

Silov, AY, Aneeshkumar, BN, Leijs, MR, Vonk, H & Wolter, JH 2000, Composite quantum wells on InP for blue stark shift. in XJM Leijtens & JH Besten, den (eds), Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands. Technische Universiteit Delft, Delft, pp. 167-170, 5th Annual Symposium of the IEEE/LEOS Benelux Chapter, Delft, Netherlands, 30/10/00.

Composite quantum wells on InP for blue stark shift. / Silov, A.Y.; Aneeshkumar, B.N.; Leijs, M.R. et al.
Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands. ed. / X.J.M. Leijtens; J.H. Besten, den. Delft: Technische Universiteit Delft, 2000. p. 167-170.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Composite quantum wells on InP for blue stark shift

AU - Silov, A.Y.

AU - Aneeshkumar, B.N.

AU - Leijs, M.R.

AU - Vonk, H.

AU - Wolter, J.H.

PY - 2000

Y1 - 2000

N2 - Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.

AB - Structures with real space separate confinement of electrons and holes can cause both blue- and redshifting of the absorption edge. Such a separate confinemnt can be achieved in a composite well structure, with materials with reverse band offset ratio with respect to the barrier. We made use of InAsyP1-y and GaxIn1-xAs squantum wells surrounded by InP barriers. Both wells are about 4 nm thick and are separated by 1 nm InP. The structures were grown by Chemical Beam Epitaxy in a p-i-n structure. It was found that an electric field of about 30kV/cm produces a blue shift of 25 meV.

M3 - Conference contribution

SN - 90-9014260-6

SP - 167

EP - 170

BT - Proceedings of the 5th annual symposium of the IEEE/LEOS Benelux Chapter : October 30, 2000, Delft , the Netherlands

A2 - Leijtens, X.J.M.

A2 - Besten, den, J.H.

PB - Technische Universiteit Delft

CY - Delft

T2 - 5th Annual Symposium of the IEEE/LEOS Benelux Chapter

Y2 - 30 October 2000 through 30 October 2000

ER -

Composite quantum wells on InP for blue stark shift

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