Components for AlGaN/GaN Power Amplifiers

B. Jacobs, P. Wingelaar, M.C.J.C.M. Krämer, S. Falcone, F. Karouta, A.P. Hek, de, E. Suijker, R. Dijk, van

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 Wmm. Pulsed measurements showed the large effect of self-heating even for circular contacts with a radius of 50 mm. The behavior of the Ni/Au Schottky contacts is according to the charge control model; the reverse current and capacitance scale linearly with the area of the diode. Tests with polygon type diodes showed no dependence of the reverse current on the number of polygon corners. The reverse current decreased when the devices were aged at 400 0C for 30 hrs. Coplanar Waveguide discontinuities were realized on AlN substrates. A scalable lumped element model was derived from measurements for T-junctions, transmission lines, bends and crosses. Differences between the model and the measurements can probably be attributed to the determination of the line capacitance needed to de-embed the probe pads.
Original languageEnglish
Title of host publicationWide-bandgap electronics (MRS Spring Meeting 2001) April 16 - 20, 2001, San Francisco, California, USA
Place of PublicationWarrendale
PublisherMaterials Research Society
ISBN (Print)1-558-99616-8
Publication statusPublished - 2001
Event2001MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 16 Apr 200120 Apr 2001

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2001MRS Spring Meeting & Exhibit
Country/TerritoryUnited States
CitySan Francisco
Internet address


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