Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

T. Mano, R. Nötzel, D. Zhou, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

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Abstract

One-dimensional (In,Ga)As quantum dot (QD) arrays are created on planar singular, vicinal, and shallow mesa-patterned GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice template in molecular beam epitaxy. On planar singular substrates, highly uniform single QD arrays along [0–11] are formed. On shallow [0–11] and [011] stripe-patterned substrates, the generated type-A and -B steps distinctly affect the surface migration processes which are crucial for QWR template development, i.e., strain-gradient-driven In adatom migration along [011] and surface-reconstruction-induced Ga/In adatom migration along [0–11]. In the presence of both type-A and -B steps on vicinal substrates misoriented towards [101], the direction of adatom migration is altered to rotate the QD arrays. This establishes the relationship between self-organized anisotropic strain and step engineering, which is exploited on shallow zigzag-patterned substrates for the realization of complex QD arrays and networks with well-positioned bends and branches, exhibiting high structural and optical quality. ©2005 American Institute of Physics
Original languageEnglish
Article number014304
Pages (from-to)014304-1/5
JournalJournal of Applied Physics
Volume97
Issue number1
DOIs
Publication statusPublished - 2005

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