Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates

E. Selçuk, G.J. Hamhuis, R. Nötzel

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size, and depth (shallow or deep) the natural spotlike arrangement of the QD arrays and groups is transformed into distinct stripes of multiple and single QDs which are ordered over macroscopic areas. Micro-photoluminescence reveals clear influence of the QD ordering on the optical properties. Distinct emission lines are observed from uncapped single QDs.
Original languageEnglish
Pages (from-to)40-43
JournalMaterials Science in Semiconductor Processing
Volume12
Issue number1-2
DOIs
Publication statusPublished - 2009

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