Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication, characterization, and circuit analysis

Wiljan Smaal, Charlotte Kjellander, Yongbin Jeong, Ashutosh Tripathi, Bas Van Der Putten, Antonio Facchetti, Henry Yan, Jordan Quinn, John Anthony, Kris Myny, Wim Dehaene, Gerwin Gelinck

Research output: Contribution to journalArticleAcademicpeer-review

45 Citations (Scopus)

Abstract

Complementary thin-film transistor circuits composed of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and a rylene carboxylic diimide derivative for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible foils. The so-called staggered TFT configuration is used, meaning that the semiconductors layers are deposited last. The work-function of the injecting gold electrodes were modified using several self-assembled monolayers (SAMs). For optimized contacts the mobility of the n- and p-channel TFTs was 0.5 cm 2/Vs and 0.2 cm 2/Vs, respectively. Strongly degraded performance is obtained when the n-channel material was printed on contacts optimized for the p-channel TFT, and vice versa. This illustrates that for CMOS circuits we need careful work-function engineering to allow proper injection for both electrons and holes. We show for the first time that by using a bimolecular mixture for the SAM we can systematically vary the work function, and demonstrate how this affects the performance of discrete n-type and p-type transistors, as well as CMOS inverters and ring oscillators. Under optimal processing conditions we realized complementary 19-stage ring oscillators with 10 μs stage delay operating at 20 V.

Original languageEnglish
Pages (from-to)1686-1692
Number of pages7
JournalOrganic Electronics
Volume13
Issue number9
DOIs
Publication statusPublished - 1 Sep 2012

Keywords

  • Complementary circuits
  • Contact injection
  • Contact modification
  • Energy delay product
  • Ink-jet printing
  • Organic transistor
  • Self-assembled monolayers

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