Comparison of soft-breakdown triggers for large-area capacitors under constant voltage stress

Jurriaan Schmitz; Hans P. Tuinhout; Hennie J. Kretschmann; Pierre H. Woerlee

doi:10.1109/7298.974830

Comparison of soft-breakdown triggers for large-area capacitors under constant voltage stress

Jurriaan Schmitz
, Hans P. Tuinhout
, Hennie J. Kretschmann
, Pierre H. Woerlee

Research output: Contribution to journal › Article › Academic › peer-review

14 Citations (Scopus)

Abstract

This work quantitatively compares soft breakdown identification methods for constant: voltage stress of large-area nMOS capacitors (up to 10 mm²) with 1.8- to 12-nm gate-oxide thickness with negative gate voltage. We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level. Index Terms-CMOS, reliability, soft breakdown, TDDB.

Original language	English
Pages (from-to)	150-157
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	1
Issue number	3
DOIs	https://doi.org/10.1109/7298.974830
Publication status	Published - 1 Dec 2001
Externally published	Yes

Funding

Manuscript received July 13, 2001. This work was supported by the EC project HUNT. J. Schmitz is with Philips Research Leuven, B-3001 Leuven, Belgium (e-mail: [email protected]). H. P. Tuinhout, H. J. Kretschmann, and P. H. Woerlee are with the Philips Research Laboratories, 5656 AA Eindhoven, The Netherlands. Publisher Item Identifier S 1530-4388(01)10628-1.

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10.1109/7298.974830

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abstract = "This work quantitatively compares soft breakdown identification methods for constant: voltage stress of large-area nMOS capacitors (up to 10 mm2) with 1.8- to 12-nm gate-oxide thickness with negative gate voltage. We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level. Index Terms-CMOS, reliability, soft breakdown, TDDB.",

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AU - Woerlee, Pierre H.

PY - 2001/12/1

Y1 - 2001/12/1

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AB - This work quantitatively compares soft breakdown identification methods for constant: voltage stress of large-area nMOS capacitors (up to 10 mm2) with 1.8- to 12-nm gate-oxide thickness with negative gate voltage. We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level. Index Terms-CMOS, reliability, soft breakdown, TDDB.

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Comparison of soft-breakdown triggers for large-area capacitors under constant voltage stress

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