Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

A. Markus; A. Fiore; J.D. Ganiere; U. Oesterle; J.X. Chen; B. Deveaud; M. Ilegems; H. Riechert

doi:10.1063/1.1447595

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

A. Markus
, A. Fiore
, J.D. Ganiere
, U. Oesterle
, J.X. Chen
, B. Deveaud
, M. Ilegems
, H. Riechert

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]

Original language	English
Pages (from-to)	911-913
Journal	Applied Physics Letters
Volume	80
Issue number	6
DOIs	https://doi.org/10.1063/1.1447595
Publication status	Published - 2002

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title = "Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm",

abstract = "The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]",

author = "A. Markus and A. Fiore and J.D. Ganiere and U. Oesterle and J.X. Chen and B. Deveaud and M. Ilegems and H. Riechert",

year = "2002",

doi = "10.1063/1.1447595",

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pages = "911--913",

journal = "Applied Physics Letters",

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T1 - Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

AU - Markus, A.

AU - Fiore, A.

AU - Ganiere, J.D.

AU - Oesterle, U.

AU - Chen, J.X.

AU - Deveaud, B.

AU - Ilegems, M.

AU - Riechert, H.

PY - 2002

Y1 - 2002

N2 - The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]

AB - The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]

U2 - 10.1063/1.1447595

DO - 10.1063/1.1447595

M3 - Article

SN - 0003-6951

VL - 80

SP - 911

EP - 913

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

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