Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

A. Markus, A. Fiore, J.D. Ganiere, U. Oesterle, J.X. Chen, B. Deveaud, M. Ilegems, H. Riechert

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)911-913
JournalApplied Physics Letters
Volume80
Issue number6
DOIs
Publication statusPublished - 2002

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