Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

G. Dingemans; P. Engelhart; R. Seguin; M.M. Mandoc; M.C.M. van de Sanden; W.M.M. Kessels

doi:10.1109/PVSC.2010.5614508

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

G. Dingemans
, P. Engelhart
, R. Seguin
, M.M. Mandoc
, M.C.M. van de Sanden
, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

20 Citations (Scopus)

Abstract

Surface passivation schemes based on Al₂O₃ have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al₂O₃ is the high fixed negative charge density (Q_f = 10¹²-10¹³ cm^-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al₂O ₃ surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H₂O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al₂O₃ deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al₂O₃ is relatively insensitive to variations in structural properties. Al₂O₃ is therefore a very robust solution for silicon surface passivation.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Publisher	Institute of Electrical and Electronics Engineers
Pages	3118-3121
Number of pages	4
ISBN (Print)	9781424458912
DOIs	https://doi.org/10.1109/PVSC.2010.5614508
Publication status	Published - 20 Dec 2010
Event	35th IEEE Photovoltaic Specialists Conference (PVSC 2010) - Honolulu, United States Duration: 20 Jun 2010 → 25 Jun 2010 Conference number: 35 https://www.ieee-pvsc.org/PVSC35/

Conference

Conference	35th IEEE Photovoltaic Specialists Conference (PVSC 2010)
Abbreviated title	PVSC 2010
Country/Territory	United States
City	Honolulu
Period	20/06/10 → 25/06/10
Internet address	https://www.ieee-pvsc.org/PVSC35/

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10.1109/PVSC.2010.5614508

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Dingemans, G., Engelhart, P., Seguin, R., Mandoc, M. M., van de Sanden, M. C. M., & Kessels, W. M. M. (2010). Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 3118-3121). Article 5614508 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2010.5614508

@inproceedings{b4923367e2364fcb91274e735bcb0b2e,

title = "Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD",

abstract = "Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.",

author = "G. Dingemans and P. Engelhart and R. Seguin and M.M. Mandoc and \{van de Sanden\}, M.C.M. and W.M.M. Kessels",

year = "2010",

month = dec,

day = "20",

doi = "10.1109/PVSC.2010.5614508",

language = "English",

isbn = "9781424458912",

pages = "3118--3121",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "35th IEEE Photovoltaic Specialists Conference (PVSC 2010), PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

url = "https://www.ieee-pvsc.org/PVSC35/",

}

Dingemans, G, Engelhart, P, Seguin, R, Mandoc, MM, van de Sanden, MCM & Kessels, WMM 2010, Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614508, Institute of Electrical and Electronics Engineers, pp. 3118-3121, 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, Hawaii, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5614508

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. / Dingemans, G.; Engelhart, P.; Seguin, R. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers, 2010. p. 3118-3121 5614508.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

AU - Dingemans, G.

AU - Engelhart, P.

AU - Seguin, R.

AU - Mandoc, M.M.

AU - van de Sanden, M.C.M.

AU - Kessels, W.M.M.

N1 - Conference code: 35

PY - 2010/12/20

Y1 - 2010/12/20

N2 - Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.

AB - Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.

UR - https://www.scopus.com/pages/publications/78650105044

U2 - 10.1109/PVSC.2010.5614508

DO - 10.1109/PVSC.2010.5614508

M3 - Conference contribution

AN - SCOPUS:78650105044

SN - 9781424458912

SP - 3118

EP - 3121

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

PB - Institute of Electrical and Electronics Engineers

T2 - 35th IEEE Photovoltaic Specialists Conference (PVSC 2010)

Y2 - 20 June 2010 through 25 June 2010

ER -

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

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