Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

G. Dingemans; P. Engelhart; R. Seguin; M.M. Mandoc; M.C.M. van de Sanden; W.M.M. Kessels

doi:10.1109/PVSC.2010.5614508

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

G. Dingemans, P. Engelhart, R. Seguin, M.M. Mandoc, M.C.M. van de Sanden, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

Surface passivation schemes based on Al₂O₃ have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al₂O₃ is the high fixed negative charge density (Q_f = 10¹²-10¹³ cm^-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al₂O ₃ surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H₂O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al₂O₃ deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al₂O₃ is relatively insensitive to variations in structural properties. Al₂O₃ is therefore a very robust solution for silicon surface passivation.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Publisher	Institute of Electrical and Electronics Engineers
Pages	3118-3121
Number of pages	4
ISBN (Print)	9781424458912
DOIs	https://doi.org/10.1109/PVSC.2010.5614508
Publication status	Published - 20 Dec 2010
Event	35th IEEE Photovoltaic Specialists Conference (PVSC 2010) - Honolulu, United States Duration: 20 Jun 2010 → 25 Jun 2010 Conference number: 35 https://www.ieee-pvsc.org/PVSC35/

Conference

Conference	35th IEEE Photovoltaic Specialists Conference (PVSC 2010)
Abbreviated title	PVSC 2010
Country/Territory	United States
City	Honolulu
Period	20/06/10 → 25/06/10
Internet address	https://www.ieee-pvsc.org/PVSC35/

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10.1109/PVSC.2010.5614508

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Dingemans, G., Engelhart, P., Seguin, R., Mandoc, M. M., van de Sanden, M. C. M., & Kessels, W. M. M. (2010). Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 3118-3121). Article 5614508 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2010.5614508

@inproceedings{b4923367e2364fcb91274e735bcb0b2e,

title = "Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD",

abstract = "Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.",

author = "G. Dingemans and P. Engelhart and R. Seguin and M.M. Mandoc and {van de Sanden}, M.C.M. and W.M.M. Kessels",

year = "2010",

month = dec,

day = "20",

doi = "10.1109/PVSC.2010.5614508",

language = "English",

isbn = "9781424458912",

pages = "3118--3121",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "35th IEEE Photovoltaic Specialists Conference (PVSC 2010), PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

url = "https://www.ieee-pvsc.org/PVSC35/",

}

Dingemans, G, Engelhart, P, Seguin, R, Mandoc, MM, van de Sanden, MCM & Kessels, WMM 2010, Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614508, Institute of Electrical and Electronics Engineers, pp. 3118-3121, 35th IEEE Photovoltaic Specialists Conference (PVSC 2010), Honolulu, Hawaii, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5614508

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD. / Dingemans, G.; Engelhart, P.; Seguin, R. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Institute of Electrical and Electronics Engineers, 2010. p. 3118-3121 5614508.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

AU - Dingemans, G.

AU - Engelhart, P.

AU - Seguin, R.

AU - Mandoc, M.M.

AU - van de Sanden, M.C.M.

AU - Kessels, W.M.M.

N1 - Conference code: 35

PY - 2010/12/20

Y1 - 2010/12/20

N2 - Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.

AB - Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.

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BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

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Y2 - 20 June 2010 through 25 June 2010

ER -

Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

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