Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

G. Dingemans, P. Engelhart, R. Seguin, M.M. Mandoc, M.C.M. van de Sanden, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)

Abstract

Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of field-effect passivation. Here we discuss the properties of Al2O 3 surface passivation films synthesized with plasma atomic layer deposition (ALD), thermal ALD (using H2O as oxidant) and PECVD. We will show that with all three methods a high level of surface passivation can be obtained for Al2O3 deposited at substrate temperatures in the range of 150-250°C. Furthermore, the role of chemical and field-effect passivation will be briefly addressed. It is concluded that the passivation performance of Al2O3 is relatively insensitive to variations in structural properties. Al2O3 is therefore a very robust solution for silicon surface passivation.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
PublisherInstitute of Electrical and Electronics Engineers
Pages3118-3121
Number of pages4
ISBN (Print)9781424458912
DOIs
Publication statusPublished - 20 Dec 2010
Event35th IEEE Photovoltaic Specialists Conference (PVSC 2010) - Honolulu, United States
Duration: 20 Jun 201025 Jun 2010
Conference number: 35
https://www.ieee-pvsc.org/PVSC35/

Conference

Conference35th IEEE Photovoltaic Specialists Conference (PVSC 2010)
Abbreviated titlePVSC 2010
CountryUnited States
CityHonolulu
Period20/06/1025/06/10
Internet address

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