Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt; S. Müller; H. Von Wenckstern; C.P. Dietrich; R. Heinhold; H.S. Kim; M.W. Allen; M. Grundmann

doi:10.1063/1.4817824

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt
, S. Müller
, H. Von Wenckstern
, C.P. Dietrich
, R. Heinhold
, H.S. Kim
, M.W. Allen
, M. Grundmann

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

Original language	English
Article number	062102
Pages (from-to)	1-5
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4817824
Publication status	Published - 5 Aug 2013

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10.1063/1.4817824

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abstract = "Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.",

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AU - Schmidt, F.

AU - Müller, S.

AU - Von Wenckstern, H.

AU - Dietrich, C.P.

AU - Heinhold, R.

AU - Kim, H.S.

AU - Allen, M.W.

AU - Grundmann, M.

PY - 2013/8/5

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N2 - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

AB - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

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Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

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