Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt, S. Müller, H. Von Wenckstern, C.P. Dietrich, R. Heinhold, H.S. Kim, M.W. Allen, M. Grundmann

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)

Abstract

Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

Original languageEnglish
Article number062102
Pages (from-to)1-5
JournalApplied Physics Letters
Volume103
Issue number6
DOIs
Publication statusPublished - 5 Aug 2013

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