Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt; S. Müller; H. Von Wenckstern; C.P. Dietrich; R. Heinhold; H.S. Kim; M.W. Allen; M. Grundmann

doi:10.1063/1.4817824

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

F. Schmidt, S. Müller, H. Von Wenckstern, C.P. Dietrich, R. Heinhold, H.S. Kim, M.W. Allen, M. Grundmann

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

Original language	English
Article number	062102
Pages (from-to)	1-5
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4817824
Publication status	Published - 5 Aug 2013

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10.1063/1.4817824

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@article{0607c6fb19a748cba6eec2df81d25ff4,

title = "Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals",

abstract = "Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.",

author = "F. Schmidt and S. M{\"u}ller and {Von Wenckstern}, H. and C.P. Dietrich and R. Heinhold and H.S. Kim and M.W. Allen and M. Grundmann",

year = "2013",

month = aug,

day = "5",

doi = "10.1063/1.4817824",

language = "English",

volume = "103",

pages = "1--5",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

AU - Schmidt, F.

AU - Müller, S.

AU - Von Wenckstern, H.

AU - Dietrich, C.P.

AU - Heinhold, R.

AU - Kim, H.S.

AU - Allen, M.W.

AU - Grundmann, M.

PY - 2013/8/5

Y1 - 2013/8/5

N2 - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

AB - Electrical properties of a ZnO microwire grown by carbo-thermal evaporation, a ZnO thin film grown by pulsed-laser deposition and a hydrothermally grown ZnO bulk crystal are compared. Deep defects were investigated by means of deep-level transient spectroscopy. The defect level E3 was observed in all samples investigated. Additionally, a defect labelled T2 that preferentially forms under Zn-rich condition was detected in the microwire, the thin film and the bulk sample. Our results indicate that V Zn is likely involved in this defect.

UR - http://www.scopus.com/inward/record.url?scp=84881637546&partnerID=8YFLogxK

U2 - 10.1063/1.4817824

DO - 10.1063/1.4817824

M3 - Article

AN - SCOPUS:84881637546

SN - 0003-6951

VL - 103

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062102

ER -

Comparative study of deep defects in ZnO microwires, thin films and bulk single crystals

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