Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

C.F.V. Carlström, R. Heijden, van der, M.S.P. Andriesse, F. Karouta, R.W. Heijden, van der, E.W.J.M. Drift, van der, H.W.M. Salemink

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
61 Downloads (Pure)

Abstract

An extensive investigation has been performed on inductively coupled plasma etching of InP. Animportant motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals.The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. Theinfluence of different process parameters such as gas flows, temperature, pressure, ion energy, andinductively coupled plasma power on the hole geometry is presented. It is concluded that photoniccrystals can be etched with Cl2 only; however, temperature and pressure control is critical. Addingpassivation gases largely broadens the window in the parameter space for hole etching. Mostimportantly, etching of narrow holes can be carried out at higher temperatures where the etching ismass limited and spontaneous etching of InP by Cl2 occurs.
Original languageEnglish
Pages (from-to)1675-1683
Number of pages7
JournalJournal of Vacuum Science and Technology, B
Volume26
Issue number5
DOIs
Publication statusPublished - 2008

Fingerprint

Inductively coupled plasma
Photonic crystals
high aspect ratio
Aspect ratio
Etching
etching
photonics
crystals
Pressure control
Plasma etching
temperature control
plasma etching
Passivation
Temperature control
passivity
gas flow
Flow of gases
chemistry
Plasmas
Fabrication

Cite this

Carlström, C.F.V. ; Heijden, van der, R. ; Andriesse, M.S.P. ; Karouta, F. ; Heijden, van der, R.W. ; Drift, van der, E.W.J.M. ; Salemink, H.W.M. / Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP. In: Journal of Vacuum Science and Technology, B. 2008 ; Vol. 26, No. 5. pp. 1675-1683.
@article{a1f055350b9b467ca0ae07abcbd55ef4,
title = "Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP",
abstract = "An extensive investigation has been performed on inductively coupled plasma etching of InP. Animportant motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals.The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. Theinfluence of different process parameters such as gas flows, temperature, pressure, ion energy, andinductively coupled plasma power on the hole geometry is presented. It is concluded that photoniccrystals can be etched with Cl2 only; however, temperature and pressure control is critical. Addingpassivation gases largely broadens the window in the parameter space for hole etching. Mostimportantly, etching of narrow holes can be carried out at higher temperatures where the etching ismass limited and spontaneous etching of InP by Cl2 occurs.",
author = "C.F.V. Carlstr{\"o}m and {Heijden, van der}, R. and M.S.P. Andriesse and F. Karouta and {Heijden, van der}, R.W. and {Drift, van der}, E.W.J.M. and H.W.M. Salemink",
year = "2008",
doi = "10.1116/1.2968696",
language = "English",
volume = "26",
pages = "1675--1683",
journal = "Journal of Vacuum Science and Technology, B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "5",

}

Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP. / Carlström, C.F.V.; Heijden, van der, R.; Andriesse, M.S.P.; Karouta, F.; Heijden, van der, R.W.; Drift, van der, E.W.J.M.; Salemink, H.W.M.

In: Journal of Vacuum Science and Technology, B, Vol. 26, No. 5, 2008, p. 1675-1683.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

AU - Carlström, C.F.V.

AU - Heijden, van der, R.

AU - Andriesse, M.S.P.

AU - Karouta, F.

AU - Heijden, van der, R.W.

AU - Drift, van der, E.W.J.M.

AU - Salemink, H.W.M.

PY - 2008

Y1 - 2008

N2 - An extensive investigation has been performed on inductively coupled plasma etching of InP. Animportant motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals.The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. Theinfluence of different process parameters such as gas flows, temperature, pressure, ion energy, andinductively coupled plasma power on the hole geometry is presented. It is concluded that photoniccrystals can be etched with Cl2 only; however, temperature and pressure control is critical. Addingpassivation gases largely broadens the window in the parameter space for hole etching. Mostimportantly, etching of narrow holes can be carried out at higher temperatures where the etching ismass limited and spontaneous etching of InP by Cl2 occurs.

AB - An extensive investigation has been performed on inductively coupled plasma etching of InP. Animportant motivation for this work is the fabrication of high-aspect-ratio holes for photonic crystals.The essential chemistry is based on Cl2 with the addition of N2 or O2 for sidewall passivation. Theinfluence of different process parameters such as gas flows, temperature, pressure, ion energy, andinductively coupled plasma power on the hole geometry is presented. It is concluded that photoniccrystals can be etched with Cl2 only; however, temperature and pressure control is critical. Addingpassivation gases largely broadens the window in the parameter space for hole etching. Mostimportantly, etching of narrow holes can be carried out at higher temperatures where the etching ismass limited and spontaneous etching of InP by Cl2 occurs.

U2 - 10.1116/1.2968696

DO - 10.1116/1.2968696

M3 - Article

VL - 26

SP - 1675

EP - 1683

JO - Journal of Vacuum Science and Technology, B

JF - Journal of Vacuum Science and Technology, B

SN - 1071-1023

IS - 5

ER -