Comparative stress patterns in cemented total hip arthroplasty

H.W.J. Huiskes

doi:10.1088/0268-1242/1/1/011

Comparative stress patterns in cemented total hip arthroplasty

H.W.J. Huiskes

Orthopaedic Biomechanics

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

2 Downloads (Pure)

Abstract

The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. The authors show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few angstroms and concentrations of a few times 1013 cm-2. There are hints that the values depend on the temperature at which the oxide is grown. They conclude that the wetting angle offers a further method of measuring fixed charge.

Original language	English
Pages (from-to)	93-108
Number of pages	16
Journal	Orthopaedics and Related Science
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/1/1/011
Publication status	Published - 1990

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title = "Comparative stress patterns in cemented total hip arthroplasty",

abstract = "The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. The authors show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few angstroms and concentrations of a few times 1013 cm-2. There are hints that the values depend on the temperature at which the oxide is grown. They conclude that the wetting angle offers a further method of measuring fixed charge.",

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N2 - The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. The authors show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few angstroms and concentrations of a few times 1013 cm-2. There are hints that the values depend on the temperature at which the oxide is grown. They conclude that the wetting angle offers a further method of measuring fixed charge.

AB - The wetting of thin oxide films on silicon by water is affected by fixed charge near the outer surface of the oxide. The authors show that existing data can be analysed to give both the depth and concentration of these fixed charges. The precise values indicate depths of a few angstroms and concentrations of a few times 1013 cm-2. There are hints that the values depend on the temperature at which the oxide is grown. They conclude that the wetting angle offers a further method of measuring fixed charge.

U2 - 10.1088/0268-1242/1/1/011

DO - 10.1088/0268-1242/1/1/011

M3 - Article

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JO - Orthopaedics and Related Science

JF - Orthopaedics and Related Science

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