Compact physical model of a-IGZO TFTs for circuit simulation

M. Ghittorelli; F. Torricelli; C. Garripoli; J.L.J.P. Van Der Steen; G.H. Gelinck; S. Abdinia; E. Cantatore; Z.M. Kovacs-Vajna

doi:10.1109/ESSDERC.2017.8066601

Compact physical model of a-IGZO TFTs for circuit simulation

M. Ghittorelli
, F. Torricelli
, C. Garripoli
, J.L.J.P. Van Der Steen
, G.H. Gelinck
, S. Abdinia
, E. Cantatore
, Z.M. Kovacs-Vajna

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

1 Downloads (Pure)

Abstract

Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

Original language	English
Title of host publication	2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	98-101
Number of pages	4
ISBN (Electronic)	978-1-5090-5978-2
ISBN (Print)	978-1-5090-5979-9
DOIs	https://doi.org/10.1109/ESSDERC.2017.8066601
Publication status	Published - 12 Oct 2017
Event	47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium Duration: 11 Sept 2017 → 14 Sept 2017

Conference

Conference	47th European Solid-State Device Research Conference, ESSDERC 2017
Country/Territory	Belgium
City	Leuven
Period	11/09/17 → 14/09/17

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10.1109/ESSDERC.2017.8066601

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Ghittorelli, M., Torricelli, F., Garripoli, C., Van Der Steen, J. L. J. P., Gelinck, G. H., Abdinia, S., Cantatore, E., & Kovacs-Vajna, Z. M. (2017). Compact physical model of a-IGZO TFTs for circuit simulation. In 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium (pp. 98-101). Article 8066601 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDERC.2017.8066601

@inproceedings{be2162f1c94c4ae0b8e89a1cf50eb6f8,

title = "Compact physical model of a-IGZO TFTs for circuit simulation",

abstract = "Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.",

author = "M. Ghittorelli and F. Torricelli and C. Garripoli and \{Van Der Steen\}, J.L.J.P. and G.H. Gelinck and S. Abdinia and E. Cantatore and Z.M. Kovacs-Vajna",

year = "2017",

month = oct,

day = "12",

doi = "10.1109/ESSDERC.2017.8066601",

language = "English",

isbn = "978-1-5090-5979-9 ",

pages = "98--101",

booktitle = "2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "47th European Solid-State Device Research Conference, ESSDERC 2017 ; Conference date: 11-09-2017 Through 14-09-2017",

}

Ghittorelli, M, Torricelli, F, Garripoli, C, Van Der Steen, JLJP, Gelinck, GH, Abdinia, S, Cantatore, E & Kovacs-Vajna, ZM 2017, Compact physical model of a-IGZO TFTs for circuit simulation. in 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium., 8066601, Institute of Electrical and Electronics Engineers, Piscataway, pp. 98-101, 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, 11/09/17. https://doi.org/10.1109/ESSDERC.2017.8066601

Compact physical model of a-IGZO TFTs for circuit simulation. / Ghittorelli, M.; Torricelli, F.; Garripoli, C. et al.
2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium. Piscataway: Institute of Electrical and Electronics Engineers, 2017. p. 98-101 8066601.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Compact physical model of a-IGZO TFTs for circuit simulation

AU - Ghittorelli, M.

AU - Torricelli, F.

AU - Garripoli, C.

AU - Van Der Steen, J.L.J.P.

AU - Gelinck, G.H.

AU - Abdinia, S.

AU - Cantatore, E.

AU - Kovacs-Vajna, Z.M.

PY - 2017/10/12

Y1 - 2017/10/12

N2 - Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

AB - Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

UR - https://www.scopus.com/pages/publications/85033451967

U2 - 10.1109/ESSDERC.2017.8066601

DO - 10.1109/ESSDERC.2017.8066601

M3 - Conference contribution

AN - SCOPUS:85033451967

SN - 978-1-5090-5979-9

SP - 98

EP - 101

BT - 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 47th European Solid-State Device Research Conference, ESSDERC 2017

Y2 - 11 September 2017 through 14 September 2017

ER -

Ghittorelli M, Torricelli F, Garripoli C, Van Der Steen JLJP, Gelinck GH, Abdinia S et al. Compact physical model of a-IGZO TFTs for circuit simulation. In 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium. Piscataway: Institute of Electrical and Electronics Engineers. 2017. p. 98-101. 8066601 doi: 10.1109/ESSDERC.2017.8066601

Compact physical model of a-IGZO TFTs for circuit simulation

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