Compact physical model of a-IGZO TFTs for circuit simulation

M. Ghittorelli, F. Torricelli, C. Garripoli, J.L.J.P. Van Der Steen, G.H. Gelinck, S. Abdinia, E. Cantatore, Z.M. Kovacs-Vajna

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Abstract

Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

Original languageEnglish
Title of host publication2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages98-101
Number of pages4
ISBN (Electronic)978-1-5090-5978-2
ISBN (Print)978-1-5090-5979-9
DOIs
Publication statusPublished - 12 Oct 2017
Event47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium
Duration: 11 Sep 201714 Sep 2017

Conference

Conference47th European Solid-State Device Research Conference, ESSDERC 2017
CountryBelgium
CityLeuven
Period11/09/1714/09/17

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    Ghittorelli, M., Torricelli, F., Garripoli, C., Van Der Steen, J. L. J. P., Gelinck, G. H., Abdinia, S., Cantatore, E., & Kovacs-Vajna, Z. M. (2017). Compact physical model of a-IGZO TFTs for circuit simulation. In 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium (pp. 98-101). [8066601] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDERC.2017.8066601