Compact physical model of a-IGZO TFTs for circuit simulation

M. Ghittorelli, F. Torricelli, C. Garripoli, J.L.J.P. Van Der Steen, G.H. Gelinck, S. Abdinia, E. Cantatore, Z.M. Kovacs-Vajna

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Abstract

Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

Original languageEnglish
Title of host publication2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages98-101
Number of pages4
ISBN (Electronic)978-1-5090-5978-2
ISBN (Print)978-1-5090-5979-9
DOIs
Publication statusPublished - 12 Oct 2017
Event47th European Solid-State Device Research Conference, ESSDERC 2017 - Leuven, Belgium
Duration: 11 Sep 201714 Sep 2017

Conference

Conference47th European Solid-State Device Research Conference, ESSDERC 2017
CountryBelgium
CityLeuven
Period11/09/1714/09/17

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Circuit simulation
Amorphous films
Thin film transistors
Networks (circuits)
Electron mobility
Drain current
Analytical models
Simulators
Substrates

Cite this

Ghittorelli, M., Torricelli, F., Garripoli, C., Van Der Steen, J. L. J. P., Gelinck, G. H., Abdinia, S., ... Kovacs-Vajna, Z. M. (2017). Compact physical model of a-IGZO TFTs for circuit simulation. In 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium (pp. 98-101). [8066601] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSDERC.2017.8066601
Ghittorelli, M. ; Torricelli, F. ; Garripoli, C. ; Van Der Steen, J.L.J.P. ; Gelinck, G.H. ; Abdinia, S. ; Cantatore, E. ; Kovacs-Vajna, Z.M. / Compact physical model of a-IGZO TFTs for circuit simulation. 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium. Piscataway : Institute of Electrical and Electronics Engineers, 2017. pp. 98-101
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Ghittorelli, M, Torricelli, F, Garripoli, C, Van Der Steen, JLJP, Gelinck, GH, Abdinia, S, Cantatore, E & Kovacs-Vajna, ZM 2017, Compact physical model of a-IGZO TFTs for circuit simulation. in 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium., 8066601, Institute of Electrical and Electronics Engineers, Piscataway, pp. 98-101, 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, 11/09/17. https://doi.org/10.1109/ESSDERC.2017.8066601

Compact physical model of a-IGZO TFTs for circuit simulation. / Ghittorelli, M.; Torricelli, F.; Garripoli, C.; Van Der Steen, J.L.J.P.; Gelinck, G.H.; Abdinia, S.; Cantatore, E.; Kovacs-Vajna, Z.M.

2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium. Piscataway : Institute of Electrical and Electronics Engineers, 2017. p. 98-101 8066601.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Torricelli, F.

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AB - Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility. The development of high functionality circuits requires accurate and efficient circuit simulation that, in turn, is based on compact physical a-IGZO TFTs models. Here we propose a compact physical-based and analytical model of the drain current of a-IGZO TFTs. The model accounts for both trapped and free charges by means of an effective density of states that accurately approximate the actual a-IGZO density of states in the energy range relevant for the TFT operation. The model is implemented in a circuit simulator and it is validated with the measurements of both coplanar and staggered a-IGZO TFTs fabricated on flexible substrates.

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Ghittorelli M, Torricelli F, Garripoli C, Van Der Steen JLJP, Gelinck GH, Abdinia S et al. Compact physical model of a-IGZO TFTs for circuit simulation. In 2017 47th European Solid-State Device Research Conference, ESSDERC 2017, 11-14 September 2017, Leuven, Belgium. Piscataway: Institute of Electrical and Electronics Engineers. 2017. p. 98-101. 8066601 https://doi.org/10.1109/ESSDERC.2017.8066601