Compact passive devices in InP membrane on silicon

F. Bordas; G. Roelkens; R. Zhang; E.J. Geluk; F. Karouta; J.J.G.M. Tol, van der; P.J. Veldhoven, van; R. Nötzel; D. Thourhout, Van; R.G.F. Baets; M.K. Smit

Compact passive devices in InP membrane on silicon

F. Bordas
, G. Roelkens
, R. Zhang
, E.J. Geluk
, F. Karouta
, J.J.G.M. Tol, van der
, P.J. Veldhoven, van
, R. Nötzel
, D. Thourhout, Van
, R.G.F. Baets
, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Downloads (Pure)

Abstract

The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators).

Original language	English
Title of host publication	Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	4.2.4-1/2
ISBN (Print)	978-1-4244-5096-1
Publication status	Published - 2009

Cite this

Bordas, F., Roelkens, G., Zhang, R., Geluk, E. J., Karouta, F., Tol, van der, J. J. G. M., Veldhoven, van, P. J., Nötzel, R., Thourhout, Van, D., Baets, R. G. F., & Smit, M. K. (2009). Compact passive devices in InP membrane on silicon. In Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna (pp. 4.2.4-1/2). Institute of Electrical and Electronics Engineers.

@inproceedings{d5a0d9b2b1e546c8985491ebc22b5625,

title = "Compact passive devices in InP membrane on silicon",

abstract = "The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators).",

author = "F. Bordas and G. Roelkens and R. Zhang and E.J. Geluk and F. Karouta and \{Tol, van der\}, J.J.G.M. and \{Veldhoven, van\}, P.J. and R. N{\"o}tzel and \{Thourhout, Van\}, D. and R.G.F. Baets and M.K. Smit",

year = "2009",

language = "English",

isbn = "978-1-4244-5096-1",

pages = "4.2.4--1/2",

booktitle = "Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Bordas, F, Roelkens, G, Zhang, R, Geluk, EJ, Karouta, F, Tol, van der, JJGM, Veldhoven, van, PJ, Nötzel, R, Thourhout, Van, D, Baets, RGF & Smit, MK 2009, Compact passive devices in InP membrane on silicon. in Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Institute of Electrical and Electronics Engineers, Piscataway, pp. 4.2.4-1/2.

Compact passive devices in InP membrane on silicon. / Bordas, F.; Roelkens, G.; Zhang, R. et al.
Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 4.2.4-1/2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Compact passive devices in InP membrane on silicon

AU - Bordas, F.

AU - Roelkens, G.

AU - Zhang, R.

AU - Geluk, E.J.

AU - Karouta, F.

AU - Tol, van der, J.J.G.M.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Thourhout, Van, D.

AU - Baets, R.G.F.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators).

AB - The high vertical index contrast and the small thickness of thin InP membranes (200nm) bonded with BCB allow the achievement of very small devices. In this paper we will present some performances of such photonic integrated circuit building blocks (wires, 3dB splitters and ring resonators).

M3 - Conference contribution

SN - 978-1-4244-5096-1

SP - 4.2.4-1/2

BT - Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Compact passive devices in InP membrane on silicon

Abstract

Fingerprint

Cite this