Comments on Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes

L.K.J. Vandamme

doi:10.1016/S0038-1101(98)00292-5

Comments on Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes

L.K.J. Vandamme

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Abstract

The paper ``Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes'' presents a study of the RTS noise amplitude in forward biased InGaAs/InP photodetectors. According to the values of the ideality factor ZRTS of the RTS current noise amplitude an anomalous behaviour (ZRTS10.5) has been observed for the ®rst time. Fluctuations in the multicarrier Auger recombination process are assumed to be responsible for anomalous RTS with ZRTS

Original language	English
Pages (from-to)	691-692
Number of pages	2
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00292-5
Publication status	Published - 1999

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title = "Comments on Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes",

abstract = "The paper ``Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes'' presents a study of the RTS noise amplitude in forward biased InGaAs/InP photodetectors. According to the values of the ideality factor ZRTS of the RTS current noise amplitude an anomalous behaviour (ZRTS10.5) has been observed for the {\textregistered}rst time. Fluctuations in the multicarrier Auger recombination process are assumed to be responsible for anomalous RTS with ZRTS",

author = "L.K.J. Vandamme",

year = "1999",

doi = "10.1016/S0038-1101(98)00292-5",

language = "English",

volume = "43",

pages = "691--692",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

number = "3",

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T1 - Comments on Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes

AU - Vandamme, L.K.J.

PY - 1999

Y1 - 1999

N2 - The paper ``Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes'' presents a study of the RTS noise amplitude in forward biased InGaAs/InP photodetectors. According to the values of the ideality factor ZRTS of the RTS current noise amplitude an anomalous behaviour (ZRTS10.5) has been observed for the ®rst time. Fluctuations in the multicarrier Auger recombination process are assumed to be responsible for anomalous RTS with ZRTS

AB - The paper ``Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes'' presents a study of the RTS noise amplitude in forward biased InGaAs/InP photodetectors. According to the values of the ideality factor ZRTS of the RTS current noise amplitude an anomalous behaviour (ZRTS10.5) has been observed for the ®rst time. Fluctuations in the multicarrier Auger recombination process are assumed to be responsible for anomalous RTS with ZRTS

U2 - 10.1016/S0038-1101(98)00292-5

DO - 10.1016/S0038-1101(98)00292-5

M3 - Article

SN - 0038-1101

VL - 43

SP - 691

EP - 692

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Comments on Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes

Abstract

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