Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays

Ordered InAs quantum dot (QD) arrays are formed by self-organized anisotropic strain engineering of an InAs/InGaAsP superlattice template on truncated InP pyramids grown by selective-area chemical beam epitaxy. The ordering is changed from one-dimensional on planar substrates to two-dimensional in the limited pyramid top surface areas. Upon shrinking the pyramid top surface area, the photoluminescence linewidth of the QD arrays narrows. This indicates improved size uniformity of the QDs when self-organized in site-controlled, local arrays.