Combined impurity gettering and defect passivation in polycrystalline silicon solar cells

L.A. Verhoef, P.P. Michiels, W.C. Sinke, C.M.M. Denisse, M. Hendriks, R.J.C. van Zolingen

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

Polycrystalline silicon wafers have been subjected to annealing (700°C, 1 h) and to a hydrogen plasma (350°C, 30 min) during the processing of solar cells. The annealing treatment enhances the bulk minority-carrier recombination lifetime by 19%, presumably by impurity gettering. The plasma treatment improves the lifetime by 26%; hydrogen passivation accounts for at least 2/3 of this improvement. Gettering and passivation are found to be complementary: application of both treatments results in a 43% increase in lifetime compared to standard.

Original languageEnglish
Pages (from-to)2704-2706
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number25
DOIs
Publication statusPublished - 1 Dec 1990
Externally publishedYes

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passivity
solar cells
life (durability)
impurities
defects
annealing
hydrogen plasma
minority carriers
wafers
silicon
hydrogen

Cite this

Verhoef, L.A. ; Michiels, P.P. ; Sinke, W.C. ; Denisse, C.M.M. ; Hendriks, M. ; van Zolingen, R.J.C. / Combined impurity gettering and defect passivation in polycrystalline silicon solar cells. In: Applied Physics Letters. 1990 ; Vol. 57, No. 25. pp. 2704-2706.
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Combined impurity gettering and defect passivation in polycrystalline silicon solar cells. / Verhoef, L.A.; Michiels, P.P.; Sinke, W.C.; Denisse, C.M.M.; Hendriks, M.; van Zolingen, R.J.C.

In: Applied Physics Letters, Vol. 57, No. 25, 01.12.1990, p. 2704-2706.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Michiels, P.P.

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