Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters

E.W. Bogaart; T. Lippen, van; J.E.M. Haverkort; R. Nötzel; J.H. Wolter

doi:10.1063/1.2193460

Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters

E.W. Bogaart, T. Lippen, van, J.E.M. Haverkort, R. Nötzel, J.H. Wolter

Photonics and Semiconductor Nanophysics

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Abstract

Coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon mode in strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs is monitored by means of time-resolved differential reflection spectroscopy. Carrier capture within the ordered QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons then modulate the optical properties of the QDs through the quantum-confined Stark effect, causing distinct oscillations of the differential reflection signal.

Original language	English
Article number	143120
Pages (from-to)	143120-1/3
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2193460
Publication status	Published - 2006

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@article{55918ff4d36c45fba843e25907236dab,

title = "Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters",

abstract = "Coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon mode in strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs is monitored by means of time-resolved differential reflection spectroscopy. Carrier capture within the ordered QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons then modulate the optical properties of the QDs through the quantum-confined Stark effect, causing distinct oscillations of the differential reflection signal.",

author = "E.W. Bogaart and {Lippen, van}, T. and J.E.M. Haverkort and R. N{\"o}tzel and J.H. Wolter",

year = "2006",

doi = "10.1063/1.2193460",

language = "English",

volume = "88",

pages = "143120--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters

AU - Bogaart, E.W.

AU - Lippen, van, T.

AU - Haverkort, J.E.M.

AU - Nötzel, R.

AU - Wolter, J.H.

PY - 2006

Y1 - 2006

N2 - Coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon mode in strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs is monitored by means of time-resolved differential reflection spectroscopy. Carrier capture within the ordered QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons then modulate the optical properties of the QDs through the quantum-confined Stark effect, causing distinct oscillations of the differential reflection signal.

AB - Coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon mode in strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs is monitored by means of time-resolved differential reflection spectroscopy. Carrier capture within the ordered QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons then modulate the optical properties of the QDs through the quantum-confined Stark effect, causing distinct oscillations of the differential reflection signal.

U2 - 10.1063/1.2193460

DO - 10.1063/1.2193460

M3 - Article

SN - 0003-6951

VL - 88

SP - 143120-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143120

ER -

Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters

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