Coherent acoustic phonons in strain engineered InAs/GaAs quantum dot clusters

E.W. Bogaart, T. Lippen, van, J.E.M. Haverkort, R. Nötzel, J.H. Wolter

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Abstract

Coherent excitation of the quasilongitudinal and quasitransverse acoustic phonon mode in strain engineered InAs/GaAs quantum dot (QD) clusters grown on (311)B GaAs is monitored by means of time-resolved differential reflection spectroscopy. Carrier capture within the ordered QD clusters initiate coherent acoustic phonon excitation, which induces a transient modulation of the local strain-induced piezoelectric field within the QD clusters. The excited acoustic phonons then modulate the optical properties of the QDs through the quantum-confined Stark effect, causing distinct oscillations of the differential reflection signal.
Original languageEnglish
Article number143120
Pages (from-to)143120-1/3
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
Publication statusPublished - 2006

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