Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A low noise amplifier (LNA) realized in CMOS technology operating in the 60 GHz band has been packaged in gap-waveguide technology. The bare die LNA is implemented in 40 nm digital CMOS technology. The chip interface is wire-bonded to a PCB employing a contactless connection to a metal waveguide. The co-simulation results of the back-to-back combined LNA-waveguide structure features a system available gain of 10.5 dB and a noise figure NF of 4.63 dB, which is comparable to the isolated LNA performance (12.8 dB available gain, 3.95 dB NF).
LanguageEnglish
Title of host publication12th European Conference on Antennas and Propagation (EuCAP 2018)
PublisherInstitution of Engineering and Technology (IET)
Number of pages4
ISBN (Electronic)978-1-78561-816-1
ISBN (Print)978-1-78561-815-4
DOIs
StatePublished - Apr 2018
Event12th European Conference on Antennas and Propagation, (EuCAP 2018) - London, United Kingdom
Duration: 9 Apr 201813 Apr 2018
Conference number: 12
http://www.eucap2018.org/

Conference

Conference12th European Conference on Antennas and Propagation, (EuCAP 2018)
Abbreviated titleEuCAP 2018
CountryUnited Kingdom
CityLondon
Period9/04/1813/04/18
Internet address

Fingerprint

Low noise amplifiers
Waveguides
Noise figure
Polychlorinated biphenyls
Wire
Metals

Keywords

  • Millimeter-wave (mm-wave), 5G, CMOS, electromagnetic packaging, waveguide transitions, gap waveguide technology, system integration.

Cite this

Aljarosha, A., Wang, B., Gao, H., Smolders, B., Matters-Kammerer, M. K., & Maaskant, R. (2018). Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology. In 12th European Conference on Antennas and Propagation (EuCAP 2018) [8671670] Institution of Engineering and Technology (IET). DOI: 10.1049/cp.2018.1366
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title = "Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology",
abstract = "A low noise amplifier (LNA) realized in CMOS technology operating in the 60 GHz band has been packaged in gap-waveguide technology. The bare die LNA is implemented in 40 nm digital CMOS technology. The chip interface is wire-bonded to a PCB employing a contactless connection to a metal waveguide. The co-simulation results of the back-to-back combined LNA-waveguide structure features a system available gain of 10.5 dB and a noise figure NF of 4.63 dB, which is comparable to the isolated LNA performance (12.8 dB available gain, 3.95 dB NF).",
keywords = "Millimeter-wave (mm-wave), 5G, CMOS, electromagnetic packaging, waveguide transitions, gap waveguide technology, system integration.",
author = "Alhassan Aljarosha and Bindi Wang and Hao Gao and Bart Smolders and M.K. Matters-Kammerer and Rob Maaskant",
year = "2018",
month = "4",
doi = "10.1049/cp.2018.1366",
language = "English",
isbn = "978-1-78561-815-4",
booktitle = "12th European Conference on Antennas and Propagation (EuCAP 2018)",
publisher = "Institution of Engineering and Technology (IET)",
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}

Aljarosha, A, Wang, B, Gao, H, Smolders, B, Matters-Kammerer, MK & Maaskant, R 2018, Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology. in 12th European Conference on Antennas and Propagation (EuCAP 2018)., 8671670, Institution of Engineering and Technology (IET), 12th European Conference on Antennas and Propagation, (EuCAP 2018), London, United Kingdom, 9/04/18. DOI: 10.1049/cp.2018.1366

Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology. / Aljarosha, Alhassan; Wang, Bindi; Gao, Hao; Smolders, Bart; Matters-Kammerer, M.K.; Maaskant, Rob.

12th European Conference on Antennas and Propagation (EuCAP 2018). Institution of Engineering and Technology (IET), 2018. 8671670.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology

AU - Aljarosha,Alhassan

AU - Wang,Bindi

AU - Gao,Hao

AU - Smolders,Bart

AU - Matters-Kammerer,M.K.

AU - Maaskant,Rob

PY - 2018/4

Y1 - 2018/4

N2 - A low noise amplifier (LNA) realized in CMOS technology operating in the 60 GHz band has been packaged in gap-waveguide technology. The bare die LNA is implemented in 40 nm digital CMOS technology. The chip interface is wire-bonded to a PCB employing a contactless connection to a metal waveguide. The co-simulation results of the back-to-back combined LNA-waveguide structure features a system available gain of 10.5 dB and a noise figure NF of 4.63 dB, which is comparable to the isolated LNA performance (12.8 dB available gain, 3.95 dB NF).

AB - A low noise amplifier (LNA) realized in CMOS technology operating in the 60 GHz band has been packaged in gap-waveguide technology. The bare die LNA is implemented in 40 nm digital CMOS technology. The chip interface is wire-bonded to a PCB employing a contactless connection to a metal waveguide. The co-simulation results of the back-to-back combined LNA-waveguide structure features a system available gain of 10.5 dB and a noise figure NF of 4.63 dB, which is comparable to the isolated LNA performance (12.8 dB available gain, 3.95 dB NF).

KW - Millimeter-wave (mm-wave), 5G, CMOS, electromagnetic packaging, waveguide transitions, gap waveguide technology, system integration.

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DO - 10.1049/cp.2018.1366

M3 - Conference contribution

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BT - 12th European Conference on Antennas and Propagation (EuCAP 2018)

PB - Institution of Engineering and Technology (IET)

ER -

Aljarosha A, Wang B, Gao H, Smolders B, Matters-Kammerer MK, Maaskant R. Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology. In 12th European Conference on Antennas and Propagation (EuCAP 2018). Institution of Engineering and Technology (IET). 2018. 8671670. Available from, DOI: 10.1049/cp.2018.1366