Abstract
This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 \mum SiGe BiCMOS technology, and the antenna is implemented on a multi-layer printed circuit board (PCB) board. Therefore, this IC is co-designed with bond-wires and passive structures on the PCB. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise Figure is 3.1-4.1dB.
| Original language | English |
|---|---|
| Title of host publication | 2020 IEEE Asia-Pacific Microwave Conference (APMC) |
| Editors | Jie Sun, Wai Ho Yu |
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 516-518 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781728169620 |
| DOIs | |
| Publication status | Published - 1 Feb 2021 |
| Event | 2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hong Kong Duration: 8 Dec 2020 → 11 Dec 2020 |
Conference
| Conference | 2020 Asia-Pacific Microwave Conference, APMC 2020 |
|---|---|
| Country/Territory | Hong Kong |
| City | Virtual, Hong Kong |
| Period | 8/12/20 → 11/12/20 |
Keywords
- antenna-in-package (AIP)
- co-design
- low-noise amplifier (LNA)
- millimeter wave (mm-wvae)