Cleaning procedure for single-crystal tungsten substrates

H.M.R. Cortenraad; S.N. Ermolov; A.W. Denier van der Gon; V.G. Glebovsky; H.H. Brongersma; A. Manenschijn; G. Gärtner; E.V. Belozerov

doi:10.1023/A:1017617905380

Cleaning procedure for single-crystal tungsten substrates

H.M.R. Cortenraad, S.N. Ermolov, A.W. Denier van der Gon, V.G. Glebovsky, H.H. Brongersma, A. Manenschijn, G. Gärtner, E.V. Belozerov

Applied Physics

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

Single-crystal tungsten substrates produced by electron-beam melting were cleaned by annealing in an oxygen atmosphere (10–3Pa, 1500°C) for a few hours to remove adsorbed carbon and by high-temperature ultrahigh-vacuum annealing (2 × 10–8Pa, 2500°C) for a few minutes to remove residual oxygen. The process was followed by low-energy ion scattering, Auger electron spectroscopy, and low-energy electron diffraction. The carbon and oxygen adsorbed on the surface of single-crystal tungsten were found to form ordered, oriented structures. The resultant high-purity, structurally perfect W substrates were used to study electron emission in the Ba/W and Re/W systems.

Original language	English
Pages (from-to)	673-677
Journal	Inorganic Materials
Volume	37
Issue number	7
DOIs	https://doi.org/10.1023/A:1017617905380
Publication status	Published - 2001

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@article{9a134de2d5a9456f8676e85dccf56ad0,

title = "Cleaning procedure for single-crystal tungsten substrates",

abstract = "Single-crystal tungsten substrates produced by electron-beam melting were cleaned by annealing in an oxygen atmosphere (10–3Pa, 1500°C) for a few hours to remove adsorbed carbon and by high-temperature ultrahigh-vacuum annealing (2 × 10–8Pa, 2500°C) for a few minutes to remove residual oxygen. The process was followed by low-energy ion scattering, Auger electron spectroscopy, and low-energy electron diffraction. The carbon and oxygen adsorbed on the surface of single-crystal tungsten were found to form ordered, oriented structures. The resultant high-purity, structurally perfect W substrates were used to study electron emission in the Ba/W and Re/W systems.",

author = "H.M.R. Cortenraad and S.N. Ermolov and {Denier van der Gon}, A.W. and V.G. Glebovsky and H.H. Brongersma and A. Manenschijn and G. G{\"a}rtner and E.V. Belozerov",

year = "2001",

doi = "10.1023/A:1017617905380",

language = "English",

volume = "37",

pages = "673--677",

journal = "Inorganic Materials",

issn = "0020-1685",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "7",

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TY - JOUR

T1 - Cleaning procedure for single-crystal tungsten substrates

AU - Cortenraad, H.M.R.

AU - Ermolov, S.N.

AU - Denier van der Gon, A.W.

AU - Glebovsky, V.G.

AU - Brongersma, H.H.

AU - Manenschijn, A.

AU - Gärtner, G.

AU - Belozerov, E.V.

PY - 2001

Y1 - 2001

N2 - Single-crystal tungsten substrates produced by electron-beam melting were cleaned by annealing in an oxygen atmosphere (10–3Pa, 1500°C) for a few hours to remove adsorbed carbon and by high-temperature ultrahigh-vacuum annealing (2 × 10–8Pa, 2500°C) for a few minutes to remove residual oxygen. The process was followed by low-energy ion scattering, Auger electron spectroscopy, and low-energy electron diffraction. The carbon and oxygen adsorbed on the surface of single-crystal tungsten were found to form ordered, oriented structures. The resultant high-purity, structurally perfect W substrates were used to study electron emission in the Ba/W and Re/W systems.

AB - Single-crystal tungsten substrates produced by electron-beam melting were cleaned by annealing in an oxygen atmosphere (10–3Pa, 1500°C) for a few hours to remove adsorbed carbon and by high-temperature ultrahigh-vacuum annealing (2 × 10–8Pa, 2500°C) for a few minutes to remove residual oxygen. The process was followed by low-energy ion scattering, Auger electron spectroscopy, and low-energy electron diffraction. The carbon and oxygen adsorbed on the surface of single-crystal tungsten were found to form ordered, oriented structures. The resultant high-purity, structurally perfect W substrates were used to study electron emission in the Ba/W and Re/W systems.

U2 - 10.1023/A:1017617905380

DO - 10.1023/A:1017617905380

M3 - Article

VL - 37

SP - 673

EP - 677

JO - Inorganic Materials

JF - Inorganic Materials

SN - 0020-1685

IS - 7

ER -