Abstract
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.
| Original language | English |
|---|---|
| Title of host publication | Proceeding of ICECS 2001, 18-20 Sept. 2001 |
| Pages | 57-60 |
| Publication status | Published - 2001 |
| Event | 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 - Malta, Malta Duration: 2 Sept 2001 → 5 Sept 2001 Conference number: 8 |
Conference
| Conference | 8th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2001 |
|---|---|
| Abbreviated title | ICECS 2001 |
| Country/Territory | Malta |
| City | Malta |
| Period | 2/09/01 → 5/09/01 |