Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

V. Vathulay, T. Sowlati, D.M.W. Leenaerts

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Abstract

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.
Original languageEnglish
Title of host publicationProceeding of ICECS 2001, 18-20 Sept. 2001
Pages57-60
Publication statusPublished - 2001
Eventconference; ICECS 2001 -
Duration: 1 Jan 2001 → …

Conference

Conferenceconference; ICECS 2001
Period1/01/01 → …
OtherICECS 2001

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    Vathulay, V., Sowlati, T., & Leenaerts, D. M. W. (2001). Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS. In Proceeding of ICECS 2001, 18-20 Sept. 2001 (pp. 57-60)