Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

V.R. Vathulya; T. Sowlati; D. Leenaerts

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

V.R. Vathulya, T. Sowlati, D. Leenaerts

Center for Wireless Technology Eindhoven

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

24 Citations (Scopus)

Abstract

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

Original language	English
Title of host publication	ESSCIRC 2001
Subtitle of host publication	27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria
Publisher	Institute of Electrical and Electronics Engineers
Pages	57-60
Number of pages	4
Publication status	Published - 2001
Event	27th European Solid-State Circuits Conference, ESSCIRC 2001 - Villach, Austria Duration: 18 Sept 2001 → 20 Sept 2001

Conference

Conference	27th European Solid-State Circuits Conference, ESSCIRC 2001
Country/Territory	Austria
City	Villach
Period	18/09/01 → 20/09/01

Cite this

@inproceedings{6c2309e80339443b94f3ad08b1fb08ba,

title = "Class 1 bluetooth power amplifier with 24 dBm output power and 48\% PAE at 2.4 GHz in 0.25 μ m CMOS",

abstract = "In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48\% PAE at a supply voltage of 2.5V.",

author = "V.R. Vathulya and T. Sowlati and D. Leenaerts",

year = "2001",

language = "English",

pages = "57--60",

booktitle = "ESSCIRC 2001",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "27th European Solid-State Circuits Conference, ESSCIRC 2001 ; Conference date: 18-09-2001 Through 20-09-2001",

}

Vathulya, VR, Sowlati, T & Leenaerts, D 2001, Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS. in ESSCIRC 2001: 27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria., 1471333, Institute of Electrical and Electronics Engineers, pp. 57-60, 27th European Solid-State Circuits Conference, ESSCIRC 2001, Villach, Austria, 18/09/01.

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS. / Vathulya, V.R.; Sowlati, T.; Leenaerts, D.
ESSCIRC 2001: 27th European Solid-State Circuits Conference 18 – 20 September 2001 Villach, Austria. Institute of Electrical and Electronics Engineers, 2001. p. 57-60 1471333.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

AU - Vathulya, V.R.

AU - Sowlati, T.

AU - Leenaerts, D.

PY - 2001

Y1 - 2001

N2 - In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

AB - In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 μn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.

UR - https://www.scopus.com/pages/publications/0012977790

M3 - Conference contribution

AN - SCOPUS:0012977790

SP - 57

EP - 60

BT - ESSCIRC 2001

PB - Institute of Electrical and Electronics Engineers

T2 - 27th European Solid-State Circuits Conference, ESSCIRC 2001

Y2 - 18 September 2001 through 20 September 2001

ER -

Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 μ m CMOS

Abstract

Conference

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