Cl2-based inductively coupled plasma etching of photonic crystals in InP

  • R. Heijden, van der
  • , M.S.P. Andriesse
  • , C.F. Carlstrom
  • , E.W.J.M. Drift, van der
  • , E.J. Geluk
  • , R.W. Heijden, van der
  • , F. Karouta
  • , P.A.M. Nouwens
  • , Y.S. Oei
  • , T. Vries, de
  • , H.W.M. Salemink

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Abstract

We have investigated Cl2-based inductively coupled plasma etching for fabrication of two-dimensional photonic crystals in the InP-based material system. The influence of temperature, ion current density and ion energy on etch rate and hole profile was studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain vertical hole profile.
Original languageEnglish
Title of host publicationProceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium
Pages287-290
Publication statusPublished - 2004
Event9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium
Duration: 2 Dec 20043 Dec 2004

Conference

Conference9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium
Country/TerritoryBelgium
CityGhent
Period2/12/043/12/04

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