Abstract
We have investigated Cl2-based inductively coupled plasma etching for fabrication of
two-dimensional photonic crystals in the InP-based material system. The influence of
temperature, ion current density and ion energy on etch rate and hole profile was
studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain
vertical hole profile.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium |
| Pages | 287-290 |
| Publication status | Published - 2004 |
| Event | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium Duration: 2 Dec 2004 → 3 Dec 2004 |
Conference
| Conference | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium |
|---|---|
| Country/Territory | Belgium |
| City | Ghent |
| Period | 2/12/04 → 3/12/04 |