We have investigated Cl2-based inductively coupled plasma etching for fabrication of
two-dimensional photonic crystals in the InP-based material system. The influence of
temperature, ion current density and ion energy on etch rate and hole profile was
studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain
vertical hole profile.
|Conference||9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium|
|Period||2/12/04 → 3/12/04|