Cl2-based inductively coupled plasma etching of photonic crystals in InP

R. Heijden, van der, M.S.P. Andriesse, C.F. Carlstrom, E.W.J.M. Drift, van der, E.J. Geluk, R.W. Heijden, van der, F. Karouta, P.A.M. Nouwens, Y.S. Oei, T. Vries, de, H.W.M. Salemink

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Abstract

We have investigated Cl2-based inductively coupled plasma etching for fabrication of two-dimensional photonic crystals in the InP-based material system. The influence of temperature, ion current density and ion energy on etch rate and hole profile was studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain vertical hole profile.
Original languageEnglish
Title of host publicationProceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium
Pages287-290
Publication statusPublished - 2004
Event9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium
Duration: 2 Dec 20043 Dec 2004

Conference

Conference9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium
CountryBelgium
CityGhent
Period2/12/043/12/04

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