Abstract
We have investigated Cl2-based inductively coupled plasma etching for fabrication of
two-dimensional photonic crystals in the InP-based material system. The influence of
temperature, ion current density and ion energy on etch rate and hole profile was
studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain
vertical hole profile.
Original language | English |
---|---|
Title of host publication | Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium |
Pages | 287-290 |
Publication status | Published - 2004 |
Event | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium Duration: 2 Dec 2004 → 3 Dec 2004 |
Conference
Conference | 9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium |
---|---|
Country/Territory | Belgium |
City | Ghent |
Period | 2/12/04 → 3/12/04 |