We have investigated Cl2-based inductively coupled plasma etching for fabrication of two-dimensional photonic crystals in the InP-based material system. The influence of temperature, ion current density and ion energy on etch rate and hole profile was studied. Nitrogen was added to the Cl2-chemistry for sidewall passivation to obtain vertical hole profile.
|Title of host publication||Proceedings of the 9th annual symposium of the IEEE/LEOS Benelux Chapter 2-3 December 2004, Ghent, Belgium|
|Publication status||Published - 2004|
|Event||9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium - Ghent, Belgium|
Duration: 2 Dec 2004 → 3 Dec 2004
|Conference||9th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 2-3, 2004, Ghent, Belgium|
|Period||2/12/04 → 3/12/04|