Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

F. Karouta; B. Jacobs; M.C.J.C.M. Krämer; K. Jacobs; I. Moerman

Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

F. Karouta, B. Jacobs, M.C.J.C.M. Krämer, K. Jacobs, I. Moerman

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Conference on Semiconductor and Integrated OptoElectronics (SIOE'99), Paper # 23
Publication status	Published - 1999
Event	1999 Conference on Semiconductor and Integrated OptoElectronics (SIOE '99), April 7-9, 1999, Cardiff, UK - Cardiff, United Kingdom Duration: 7 Apr 1999 → 9 Apr 1999

Conference

Conference	1999 Conference on Semiconductor and Integrated OptoElectronics (SIOE '99), April 7-9, 1999, Cardiff, UK
Abbreviated title	SIOE '99
Country/Territory	United Kingdom
City	Cardiff
Period	7/04/99 → 9/04/99

Cite this

@inproceedings{11a5bcdf1d3f4ab9a5c5cd5aaed9e5dd,

title = "Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN",

author = "F. Karouta and B. Jacobs and M.C.J.C.M. Kr{\"a}mer and K. Jacobs and I. Moerman",

year = "1999",

language = "English",

booktitle = "Conference on Semiconductor and Integrated OptoElectronics (SIOE'99), Paper # 23",

note = "1999 Conference on Semiconductor and Integrated OptoElectronics (SIOE '99), April 7-9, 1999, Cardiff, UK, SIOE '99 ; Conference date: 07-04-1999 Through 09-04-1999",

}

TY - GEN

T1 - Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

AU - Karouta, F.

AU - Jacobs, B.

AU - Krämer, M.C.J.C.M.

AU - Jacobs, K.

AU - Moerman, I.

PY - 1999

Y1 - 1999

M3 - Conference contribution

BT - Conference on Semiconductor and Integrated OptoElectronics (SIOE'99), Paper # 23

T2 - 1999 Conference on Semiconductor and Integrated OptoElectronics (SIOE '99), April 7-9, 1999, Cardiff, UK

Y2 - 7 April 1999 through 9 April 1999

ER -