Chemical mechanical polishing for planarisation of advanced IC processes

H. Lifka; W. Doedel; T. Souts; P. H. Woerlee

Chemical mechanical polishing for planarisation of advanced IC processes

H. Lifka, W. Doedel, T. Souts, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

An CMP process will be presented which is optimised for low layout sensitivity and good uniformity. The best results were obtained by using a stack of two polishing cloths, instead of a single cloth. This results in a better planarisation capability while improving the uniformity compared to a single hard polishing cloth. The feasibility of the novel CMP process was demonstrated on a 64k SRAM.

Original language	English
Title of host publication	ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
Editors	J. P. Noblanc, P. Gentil, M. Verdone, J. Borel, A. Nouailhat
Publisher	IEEE Computer Society
Pages	557-560
Number of pages	4
ISBN (Print)	9782863321355, 2863321358
Publication status	Published - 1 Jan 1993
Externally published	Yes
Event	23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: 13 Sept 1993 → 16 Sept 1993

Conference

Conference	23rd European Solid State Device Research Conference, ESSDERC 1993
Country/Territory	France
City	Grenoble
Period	13/09/93 → 16/09/93

Cite this

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title = "Chemical mechanical polishing for planarisation of advanced IC processes",

abstract = "An CMP process will be presented which is optimised for low layout sensitivity and good uniformity. The best results were obtained by using a stack of two polishing cloths, instead of a single cloth. This results in a better planarisation capability while improving the uniformity compared to a single hard polishing cloth. The feasibility of the novel CMP process was demonstrated on a 64k SRAM.",

author = "H. Lifka and W. Doedel and T. Souts and Woerlee, \{P. H.\}",

year = "1993",

month = jan,

day = "1",

language = "English",

isbn = "9782863321355",

pages = "557--560",

editor = "Noblanc, \{J. P.\} and P. Gentil and M. Verdone and J. Borel and A. Nouailhat",

booktitle = "ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "23rd European Solid State Device Research Conference, ESSDERC 1993 ; Conference date: 13-09-1993 Through 16-09-1993",

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Lifka, H, Doedel, W, Souts, T & Woerlee, PH 1993, Chemical mechanical polishing for planarisation of advanced IC processes. in JP Noblanc, P Gentil, M Verdone, J Borel & A Nouailhat (eds), ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference., 5435562, IEEE Computer Society, pp. 557-560, 23rd European Solid State Device Research Conference, ESSDERC 1993, Grenoble, France, 13/09/93.

Chemical mechanical polishing for planarisation of advanced IC processes. / Lifka, H.; Doedel, W.; Souts, T. et al.
ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference. ed. / J. P. Noblanc; P. Gentil; M. Verdone; J. Borel; A. Nouailhat. IEEE Computer Society, 1993. p. 557-560 5435562.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Chemical mechanical polishing for planarisation of advanced IC processes

AU - Lifka, H.

AU - Doedel, W.

AU - Souts, T.

AU - Woerlee, P. H.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - An CMP process will be presented which is optimised for low layout sensitivity and good uniformity. The best results were obtained by using a stack of two polishing cloths, instead of a single cloth. This results in a better planarisation capability while improving the uniformity compared to a single hard polishing cloth. The feasibility of the novel CMP process was demonstrated on a 64k SRAM.

AB - An CMP process will be presented which is optimised for low layout sensitivity and good uniformity. The best results were obtained by using a stack of two polishing cloths, instead of a single cloth. This results in a better planarisation capability while improving the uniformity compared to a single hard polishing cloth. The feasibility of the novel CMP process was demonstrated on a 64k SRAM.

UR - https://www.scopus.com/pages/publications/0011766501

M3 - Conference contribution

AN - SCOPUS:0011766501

SN - 9782863321355

SN - 2863321358

SP - 557

EP - 560

BT - ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference

A2 - Noblanc, J. P.

A2 - Gentil, P.

A2 - Verdone, M.

A2 - Borel, J.

A2 - Nouailhat, A.

PB - IEEE Computer Society

T2 - 23rd European Solid State Device Research Conference, ESSDERC 1993

Y2 - 13 September 1993 through 16 September 1993

ER -

Chemical mechanical polishing for planarisation of advanced IC processes

Abstract

Conference

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