Chemical and Complementary Role of Fluorine in a Chlorine Based Reactive Ion Etching of GaN

F. Karouta, B. Jacobs, O. Schön, M. Heuken

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	3rd International Conference on Nitride Semiconductors
Pages	105-
Publication status	Published - 1999
Event	3rd International Conference on Nitride Semiconductors, 1999 - Montpellier, France Duration: 5 Jul 1999 → 9 Jul 1999

Conference	3rd International Conference on Nitride Semiconductors, 1999
Country/Territory	France
City	Montpellier
Period	5/07/99 → 9/07/99
Other	3rd International Conference on Nitride Semiconductors, Montpellier, France, 5-9 July

Cite this

@inproceedings{e0793fdb314f4a89a974d87f35e7c4fa,

title = "Chemical and Complementary Role of Fluorine in a Chlorine Based Reactive Ion Etching of GaN",

author = "F. Karouta and B. Jacobs and O. Sch{\"o}n and M. Heuken",

year = "1999",

language = "English",

pages = "105--",

booktitle = "3rd International Conference on Nitride Semiconductors",

note = "3rd International Conference on Nitride Semiconductors, 1999 ; Conference date: 05-07-1999 Through 09-07-1999",

}

TY - GEN

T1 - Chemical and Complementary Role of Fluorine in a Chlorine Based Reactive Ion Etching of GaN

AU - Karouta, F.

AU - Jacobs, B.

AU - Schön, O.

AU - Heuken, M.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SP - 105-

BT - 3rd International Conference on Nitride Semiconductors

T2 - 3rd International Conference on Nitride Semiconductors, 1999

Y2 - 5 July 1999 through 9 July 1999

ER -